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TIP41CBG 参数 Datasheet PDF下载

TIP41CBG图片预览
型号: TIP41CBG
PDF下载: 下载PDF文件 查看货源
内容描述: [TRANSISTOR 6 A, 100 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power]
分类和应用: 局域网开关晶体管
文件页数/大小: 7 页 / 132 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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TIP41G, TIP41AG, TIP41BG, TIP41CG (NPN), TIP42G, TIP42AG, TIP42BG,
TIP42CG (PNP)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Symbol
R
qJC
R
qJA
Max
1.67
57
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)
(I
C
= 30 mAdc, I
B
= 0)
TIP41G, TIP42G
TIP41AG, TIP42AG
TIP41BG, TIP42BG
TIP41CG, TIP42CG
Collector Cutoff Current
(V
CE
= 30 Vdc, I
B
= 0)
TIP41G, TIP41AG, TIP42G, TIP42AG
(V
CE
= 60 Vdc, I
B
= 0)
TIP41BG, TIP41CG, TIP42BG, TIP42CG
Collector Cutoff Current
(V
CE
= 40 Vdc, V
EB
= 0)
TIP41G, TIP42G
(V
CE
= 60 Vdc, V
EB
= 0)
TIP41AG, TIP42AG
(V
CE
= 80 Vdc, V
EB
= 0)
TIP41BG, TIP42BG
(V
CE
= 100 Vdc, V
EB
= 0)
TIP41CG, TIP42CG
Emitter Cutoff Current (V
BE
= 5.0 Vdc, I
C
= 0)
ON CHARACTERISTICS
(Note 2)
DC Current Gain
(I
C
= 0.3 Adc, V
CE
= 4.0 Vdc)
(I
C
= 3.0 Adc, V
CE
= 4.0 Vdc)
Collector−Emitter Saturation Voltage
(I
C
= 6.0 Adc, I
B
= 600 mAdc)
Base−Emitter On Voltage
(I
C
= 6.0 Adc, V
CE
= 4.0 Vdc)
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= 500 mAdc, V
CE
= 10 Vdc, f
test
= 1.0 MHz)
Small−Signal Current Gain
(I
C
= 0.5 Adc, V
CE
= 10 Vdc, f = 1.0 kHz)
2. Pulse Test: Pulse Width
300
ms,
Duty Cycle
2.0%.
f
T
3.0
h
fe
20
MHz
h
FE
30
15
V
CE(sat)
V
BE(on)
2.0
1.5
Vdc
75
Vdc
V
CEO(sus)
40
60
80
100
I
CEO
I
CES
I
EBO
400
400
400
400
1.0
mAdc
0.7
0.7
mAdc
mAdc
Vdc
Symbol
Min
Max
Unit
http://onsemi.com
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