TIP140 TIP141 TIP142 TIP145 TIP146 TIP147
TYPICAL CHARACTERISTICS
NPN
TIP140, TIP141, TIP142
20,000
5000
hFE , DC CURRENT GAIN
TJ = 150°C
hFE , DC CURRENT GAIN
100°C
25°C
– 55°C
1000
10,000
7000
5000
3000
2000
VCE = 4.0 V
7.0
10
1000
0.5
0.7
1.0
2.0
3.0 4.0 5.0
IC, COLLECTOR CURRENT (AMPS)
7.0
10
– 55°C
TJ = 150°C
100°C
25°C
PNP
TIP145, TIP146, TIP147
2000
500
300
0.5
VCE = 4.0 V
1.0
2.0
3.0 4.0 5.0
IC, COLLECTOR CURRENT (AMPS)
Figure 3. DC Current Gain versus Collector Current
VCE(SAT) , COLLECTOR–EMITTER SATURATION VOLTAGE (VOLTS)
VCE(SAT) , COLLECTOR–EMITTER SATURATION VOLTAGE (VOLTS)
5.0
5.0
3.0
2.0
3.0
2.0
IC = 10 A, IB = 4.0 mA
IC = 10 A, IB = 4.0 mA
IC = 5.0 A, IB = 10 mA
1.0
IC = 1.0 A, IB = 2.0 mA
0.7
0.5
– 75
– 50
– 25
0
25
50
75 100 125
TJ, JUNCTION TEMPERATURE (°C)
150
175
IC = 5.0 A, IB = 10 mA
1.0
0.7
0.5
– 75 – 50
– 25
IC = 1.0 A, IB = 2.0 mA
0
25 50
75 100 125
TJ, JUNCTION TEMPERATURE (°C)
150
175
Figure 4. Collector–Emitter Saturation Voltage
VBE, BASE–EMITTER VOLTAGE (VOLTS)
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
– 75
– 25
25
75
VBE, BASE–EMITTER VOLTAGE (VOLTS)
4.0
VCE = 4.0 V
4.0
3.6
3.2
2.8
2.4
IC = 10 A
2.0
1.6
1.2
0.8
– 75
– 25
25
75
125
5.0 A
1.0 A
175
VCE = 4.0 V
IC = 10 A
5.0 A
1.0 A
125
175
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Base–Emitter Voltage
Motorola Bipolar Power Transistor Device Data
3
ONSEMI [ ON SEMICONDUCTOR ]
