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SBC856BDW1T3G 参数 Datasheet PDF下载

SBC856BDW1T3G图片预览
型号: SBC856BDW1T3G
PDF下载: 下载PDF文件 查看货源
内容描述: 双路通用晶体管 [Dual General Purpose Transistors]
分类和应用: 晶体小信号双极晶体管光电二极管放大器
文件页数/大小: 7 页 / 123 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G,
SBC857BDW1T1G Series, BC858CDW1T1G Series
TYPICAL CHARACTERISTICS
BC857/SBC857/BC858
2.0
hFE , NORMALIZED DC CURRENT GAIN
1.5
1.0
0.7
0.5
V
CE
= -10 V
T
A
= 25°C
V, VOLTAGE (VOLTS)
-1.0
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
V
CE(sat)
@ I
C
/I
B
= 10
-0.5 -1.0 -2.0
-5.0 -10 -20
I
C
, COLLECTOR CURRENT (mAdc)
-50
-100
V
BE(on)
@ V
CE
= -10 V
T
A
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
0.3
0.2
-0.2
-0.5 -1.0 -2.0
-5.0 -10 -20
-50
I
C
, COLLECTOR CURRENT (mAdc)
-100 -200
0
-0.1 -0.2
Figure 7. Normalized DC Current Gain
Figure 8. “Saturation” and “On” Voltages
-2.0
VCE , COLLECTOR-EMITTER VOLTAGE (V)
θ
VB , TEMPERATURE COEFFICIENT (mV/
°
C)
T
A
= 25°C
-1.6
1.0
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
-1.2
I
C
=
-10 mA
I
C
= -50 mA
I
C
= -200 mA
I
C
= -100 mA
-0.8
-0.4
I
C
= -20 mA
0
-0.02
-0.1
-1.0
I
B
, BASE CURRENT (mA)
-10 -20
-0.2
-10
-1.0
I
C
, COLLECTOR CURRENT (mA)
-100
Figure 9. Collector Saturation Region
f T, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
Figure 10. Base−Emitter Temperature
Coefficient
400
300
200
150
100
80
60
40
30
20
-0.5
V
CE
= -10 V
T
A
= 25°C
10
C
ib
7.0
T
A
= 25°C
C, CAPACITANCE (pF)
5.0
C
ob
3.0
2.0
1.0
-0.4 -0.6
-1.0
-2.0
-4.0 -6.0
-10
-20 -30 -40
-1.0
-2.0 -3.0
-5.0
-10
-20
-30
-50
V
R
, REVERSE VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mAdc)
Figure 11. Capacitances
Figure 12. Current−Gain
Bandwidth Product
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