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SBC856BDW1T3G 参数 Datasheet PDF下载

SBC856BDW1T3G图片预览
型号: SBC856BDW1T3G
PDF下载: 下载PDF文件 查看货源
内容描述: 双路通用晶体管 [Dual General Purpose Transistors]
分类和应用: 晶体小信号双极晶体管光电二极管放大器
文件页数/大小: 7 页 / 123 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G,
SBC857BDW1T1G Series, BC858CDW1T1G Series
TYPICAL CHARACTERISTICS
BC856/SBC856
-1.0
hFE , DC CURRENT GAIN (NORMALIZED)
V
CE
= -5.0 V
T
A
= 25°C
2.0
1.0
0.5
V, VOLTAGE (VOLTS)
T
J
= 25°C
-0.8
V
BE(sat)
@ I
C
/I
B
= 10
-0.6
V
BE
@ V
CE
= -5.0 V
-0.4
-0.2
0.2
0
-0.2
V
CE(sat)
@ I
C
/I
B
= 10
-1.0 -2.0 -5.0 -10 -20 -50 -100 -200
I
C
, COLLECTOR CURRENT (mA)
-0.5
-50 -100 -200
-5.0 -10 -20
-1.0 -2.0
I
C
, COLLECTOR CURRENT (mA)
-0.1 -0.2
Figure 1. DC Current Gain
Figure 2. “On” Voltage
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
-2.0
θ
VB, TEMPERATURE COEFFICIENT (mV/
°
C)
-1.0
-1.6
I
C
=
-10 mA
-20 mA
-50 mA
-100 mA -200 mA
-1.4
-1.2
-1.8
q
VB
for V
BE
-55°C to 125°C
-0.8
-2.2
-0.4
T
J
= 25°C
0
-0.02
-0.05 -0.1 -0.2
-0.5 -1.0 -2.0
I
B
, BASE CURRENT (mA)
-5.0
-10
-20
-2.6
-3.0
-0.2
-0.5 -1.0
-50
-2.0
-5.0 -10 -20
I
C
, COLLECTOR CURRENT (mA)
-100 -200
Figure 3. Collector Saturation Region
Figure 4. Base−Emitter Temperature Coefficient
f T, CURRENT-GAIN - BANDWIDTH PRODUCT
40
T
J
= 25°C
C, CAPACITANCE (pF)
20
C
ib
500
V
CE
= -5.0 V
200
100
50
10
8.0
6.0
4.0
2.0
-0.1 -0.2
C
ob
20
-0.5
-1.0 -2.0
-5.0 -10 -20
V
R
, REVERSE VOLTAGE (VOLTS)
-50 -100
-100
-1.0
-10
I
C
, COLLECTOR CURRENT (mA)
Figure 5. Capacitance
Figure 6. Current−Gain
Bandwidth Product
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