NTMYS029N08LH
TYPICAL CHARACTERISTICS
10K
1K
10
9
8
C
7
ISS
6
5
4
3
100
C
OSS
RSS
Q
Q
GD
GS
10
1
V
DS
= 40 V
V
= 0 V
GS
2
C
T = 25°C
T = 25°C
J
J
1
0
I
D
= 10 A
f = 1 MHz
0
10
20
30
40
50
60
70
80
0
1
2
3
4
5
6
7
8
9
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
100
0.5
V = 0 V
GS
V
V
= 4.5 V
= 64 V
GS
DD
I
D
= 50 A
t
d(off)
10
t
d(on)
t
r
t
f
T = 25°C
T = −55°C
T = 125°C
J
J
J
0.1
1
1
10
R , GATE RESISTANCE (W)
50
0.3
0.4
0.5
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.6
0.7
0.8
0.9
1.0
V
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10
V
≤ 10 V
GS
Single Pulse
= 25°C
T
C
100
10
T
= 25°C
J(initial)
1
10 ms
0.5 ms
1 ms
1
T
= 100°C
J(initial)
R
Limit
DS(on)
Thermal Limit
Package Limit
10 ms
0.1
0.1
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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