NTMT185N60S5H
TYPICAL CHARACTERISTICS
30
25
20
100
7.0 V
6.0 V
V
GS
= 10 V
V
DS
= 20 V
T
C
= 25°C
15
10
5
10
5.0 V
T
= 25°C
C
4.5 V
4.0 V
T
= 150°C
T
C
= −55°C
C
0
1
0
5
10
15
20
2
0
0
3
4
5
6
1.2
30
V
, DRAIN−TO−SOURCE VOLTAGE (V)
V
, GATE−TO−SOURCE VOLTAGE (V)
DS
GS
Figure 1. On−Region Characteristics
= 25°C
Figure 2. Transfer Characteristics
0.4
0.3
0.2
100
10
T
C
V
= 0 V
GS
T
= 25°C
C
V
V
= 10 V
= 20 V
GS
GS
1
0.1
0
T
C
= 150°C
T
= −55°C
C
0.1
0
5
10
15
20
25
30
0.2
0.4
0.6
0.8
1.0
I , DRAIN CURRENT (A)
D
V
, DIODE FORWARD VOLTAGE (V)
SD
Figure 3. On−Resistance Variation vs. Drain
Figure 4. Diode Forward Voltage vs. Source
Current
Current and Gate Voltage
6
5
4
3
2
1
0
10
10
10
10
10
10
10
10
V
= 0 V
f = 250 kHz
C
C
C
= C + C (C = shorted)
GS GD DS
GS
ISS
I
D
= 7.5 A
= C + C
OSS
RSS
DS
GD
V
DS
= 130 V
= C
GD
8
6
4
V
= 400 V
DS
C
ISS
C
C
OSS
RSS
2
0
−1
10
0
100
200
300
400
500
600
5
10
15
20
25
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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