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NTMT185N60S5H 参数 Datasheet PDF下载

NTMT185N60S5H图片预览
型号: NTMT185N60S5H
PDF下载: 下载PDF文件 查看货源
内容描述: [Power MOSFET, N-Channel, SUPERFET® V, FAST, 600 V, 15 A, 185 mΩ, Power88]
分类和应用:
文件页数/大小: 9 页 / 393 K
品牌: ONSEMI [ ONSEMI ]
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NTMT185N60S5H  
THERMAL CHARACTERISTICS  
Parameter  
Symbol  
Value  
1.08  
45  
Unit  
Thermal Resistance, JunctiontoCase, Max.  
Thermal Resistance, JunctiontoAmbient, Max.  
R
°C/W  
q
JC  
R
q
JA  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
J
Parameter  
Symbol  
Test Conditions  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
DraintoSource Breakdown Voltage  
V
V
I
= 0 V, I = 1 mA, T = 25_C  
600  
V
(BR)DSS  
GS  
D
J
DraintoSource Breakdown Voltage  
Temperature Coefficient  
DV  
/
= 10 mA, Referenced to 25_C  
630  
mV/_C  
(BR)DSS  
D
DT  
J
Zero Gate Voltage Drain Current  
GatetoSource Leakage Current  
ON CHARACTERISTICS  
I
V
GS  
= 0 V, V = 600 V, T = 25_C  
2
mA  
DSS  
GSS  
DS  
J
I
V
=
30 V, V = 0 V  
100  
nA  
GS  
DS  
DraintoSource On Resistance  
Gate Threshold Voltage  
R
V
= 10 V, I = 7.5 A, T = 25_C  
2.7  
148  
185  
4.3  
mW  
V
DS(on)  
GS  
D
J
V
V
GS  
= V , I = 1.4 mA, T = 25_C  
GS(th)  
DS  
D
J
Forward Transconductance  
g
FS  
V
DS  
= 20 V, I = 7.5 A  
18  
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE  
Input Capacitance  
C
V
= 400 V, V = 0 V, f = 250 kHz  
1350  
25  
pF  
ISS  
DS  
GS  
Output Capacitance  
C
OSS  
Time Related Output Capacitance  
C
I
= Constant, V = 0 V to 400 V,  
372  
OSS(tr.)  
D
DS  
= 0 V  
V
GS  
Energy Related Output Capacitance  
Total Gate Charge  
C
V
= 0 V to 400 V, V = 0 V  
42  
25  
7
OSS(er.)  
DS  
GS  
Q
V
= 400 V, I = 7.5 A, V = 10 V  
nC  
G(tot)  
DD  
D
GS  
GatetoSource Charge  
GatetoDrain Charge  
Gate Resistance  
Q
GS  
Q
8
GD  
R
f = 1 MHz  
0.9  
W
G
SWITCHING CHARACTERISTICS  
Turn-On Delay Time  
Rise Time  
t
V
GS  
I
= 0/10 V, V = 400 V,  
18  
8
ns  
d(on)  
DD  
= 7.5 A, R = 10 W  
D
G
t
r
Turn-Off Delay Time  
Fall Time  
t
52  
4.3  
d(off)  
t
f
SOURCE-TODRAIN DIODE CHARACTERISTICS  
Forward Diode Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
V
V
GS  
= 0 V, I = 7.5 A, T = 25_C  
1.2  
V
SD  
RR  
SD  
J
t
V
= 0 V, I = 7.5 A,  
213  
2368  
ns  
nC  
GS  
SD  
dI/dt = 100 A/ms, V = 400 V  
DD  
Q
RR  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
www.onsemi.com  
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