NTMFS5C612N
TYPICAL CHARACTERISTICS
10,000
1000
10
V
= 48 V
DS
9
8
7
6
5
4
3
2
C
ISS
T = 25C
J
I
D
= 50 A
C
OSS
Q
GD
Q
GS
100
C
RSS
10
1
V
= 0 V
GS
T = 25C
J
1
0
f = 1 MHz
0
10
20
30
40
50
60
0
10
20
30
40
50
60
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
100
1000
V
V
= 10 V
= 48 V
GS
DS
I
D
= 50 A
t
d(off)
t
r
10
100
10
t
f
t
d(on)
T = 125C
J
T = 25C
J
T = −55C
J
1
1
10
R , GATE RESISTANCE (W)
100
0.3
0.4
0.5
, SOURCE−TO−DRAIN VOLTAGE (V)
SD
0.6
0.7
0.8
0.9
1.0
V
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
1000
100
10
10 ms
T
= 25C
J(initial)
100 ms
1 ms
T
= 100C
J(initial)
10
T
C
= 25C
Single Pulse
10 V
10 ms
V
GS
1
R
Limit
DS(on)
Thermal Limit
Package Limit
1
0.1
0.1
1
10
100
1E−04
1E−03
TIME IN AVALANCHE (s)
1E−02
V
DS
(V)
Figure 11. Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
www.onsemi.com
4
ONSEMI [ ONSEMI ]
