NTMFS5C612N
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
60
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/
12.8
(BR)DSS
mV/C
T
J
Zero Gate Voltage Drain Current
I
V
= 0 V,
T = 25C
10
DSS
GS
DS
J
V
= 60 V
mA
T = 125C
J
250
100
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
I
V
= 0 V, V = 20 V
nA
GSS
DS
GS
GS
V
V
= V , I = 250 mA
2.0
4.0
1.5
V
GS(TH)
DS
D
Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
/T
J
−9.4
mV/C
mW
GS(TH)
R
V
GS
= 10 V
I = 50 A
D
1.27
DS(on)
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
4830
3180
22
ISS
Output Capacitance
C
V
V
= 0 V, f = 1 MHz, V = 25 V
pF
OSS
RSS
GS
DS
Reverse Transfer Capacitance
Total Gate Charge
C
Q
60.2
14.2
23.3
6.3
G(TOT)
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Q
G(TH)
nC
V
Q
= 10 V, V = 48 V; I = 50 A
GS
GD
GP
GS
DS
D
Q
V
4.9
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
14.2
46.9
38.9
11.9
d(ON)
Rise Time
t
r
V
= 10 V, V = 48 V,
DS
GS
D
ns
V
I
= 50 A, R = 2.5 W
G
Turn−Off Delay Time
t
d(OFF)
Fall Time
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
T = 25C
0.81
0.67
82.4
40.8
41.6
139
1.0
SD
J
V
S
= 0 V,
GS
I
= 50 A
T = 125C
J
Reverse Recovery Time
Charge Time
t
RR
t
ns
a
V
= 0 V, dI /dt = 100 A/ms,
S
GS
I
S
= 50 A
Discharge Time
t
b
Reverse Recovery Charge
Q
nC
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle 2%.
5. Switching characteristics are independent of operating junction temperatures.
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