NTD4302
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 250
µA)
Positive Temperature Coefficient
Zero Gate Voltage Drain Current
(V
GS
= 0 Vdc, V
DS
= 30 Vdc, T
J
= 25°C)
(V
GS
= 0 Vdc, V
DS
= 30 Vdc, T
J
= 125°C)
Gate−Body Leakage Current (V
GS
=
±20
Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250
µAdc)
Negative Temperature Coefficient
Static Drain−Source On−State Resistance
(V
GS
= 10 Vdc, I
D
= 20 Adc)
(V
GS
= 10 Vdc, I
D
= 10 Adc)
(V
GS
= 4.5 Vdc, I
D
= 5.0 Adc)
Forward Transconductance (V
DS
= 15 Vdc, I
D
= 10 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Ga e C a ge
Gate Charge
(V
DS
= 24 Vdc, I
D
= 2.0 Adc,
Vd
2 0 Ad
V
GS
= 10 Vdc)
BODY−DRAIN DIODE RATINGS
(Note 5)
Diode Forward On−Voltage
(I
S
= 2.3 Adc, V
GS
= 0 Vdc)
(I
S
= 20 Adc, V
GS
= 0 Vdc)
(I
S
= 2.3 Adc, V
GS
= 0 Vdc, T
J
= 125°C)
Reverse Recovery Time
e e se eco e y
e
(I
S
= 2.3 Adc, V
GS
= 0 Vdc,
2 3 Ad
Vd
dI
S
/dt = 100 A/µs)
Reverse Recovery Stored Charge
5. Indicates Pulse Test: Pulse Width = 300
µsec
max, Duty Cycle
≤
2%.
6. Switching characteristics are independent of operating junction temperature.
V
SD
−
−
−
t
rr
t
a
t
b
Q
rr
−
−
−
−
0.75
0.90
0.65
39
20
19
0.043
1.0
−
−
65
−
−
−
µC
ns
s
Vdc
(V
DD
= 24 Vdc, I
D
= 20 Adc,
V
GS
= 10 Vdc,
Vdc
R
G
= 2.5
Ω)
(V
DD
= 25 Vdc, I
D
= 1.0 Adc,
V
GS
= 10 Vdc,
Vdc
R
G
= 2.5
Ω)
(V
DD
= 25 Vdc, I
D
= 1.0 Adc,
V
GS
= 10 Vdc,
Vdc
R
G
= 6.0
Ω)
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Q
T
Q
gs
(Q1)
Q
gd
(Q2)
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
11
15
85
55
11
13
55
40
15
25
40
58
55
5.5
15
20
25
130
90
20
20
90
75
−
−
−
−
80
−
−
nC
ns
ns
ns
(V
DS
= 24 Vdc, V
GS
= 0 Vdc,
Vd
Vd
1.0
f = 1 0 MHz)
C
iss
C
oss
C
rss
−
−
−
2050
640
225
2400
800
310
pF
V
GS(th)
1.0
−
R
DS(on)
−
−
−
gFS
−
0.0078
0.0078
0.010
20
0.010
0.010
0.013
−
Mhos
1.9
−3.8
3.0
−
Ω
Vdc
V
(BR)DSS
30
−
I
DSS
−
−
I
GSS
−
−
−
−
1.0
10
±100
nAdc
−
25
−
−
Vdc
mV/°C
µAdc
Symbol
Min
Typ
Max
Unit
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