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NTD4302T4 参数 Datasheet PDF下载

NTD4302T4图片预览
型号: NTD4302T4
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOSFET 68安培, 30伏特( N沟道DPAK ) [Power MOSFET 68 Amps, 30 Volts(N−Channel DPAK)]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲局域网
文件页数/大小: 10 页 / 89 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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NTD4302
MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Thermal Resistance
− Junction−to−Case
Total Power Dissipation @ T
C
= 25°C
Continuous Drain Current @ T
C
= 25°C (Note 4)
Continuous Drain Current @ T
C
= 100°C
Thermal Resistance
− Junction−to−Ambient (Note 2)
Total Power Dissipation @ T
A
= 25°C
Continuous Drain Current @ T
A
= 25°C
Continuous Drain Current @ T
A
= 100°C
Pulsed Drain Current (Note 3)
Thermal Resistance
− Junction−to−Ambient (Note 1)
Total Power Dissipation @ T
A
= 25°C
Continuous Drain Current @ T
A
= 25°C
Continuous Drain Current @ T
A
= 100°C
Pulsed Drain Current (Note 3)
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche Energy − Starting T
J
= 25°C
(V
DD
= 30 Vdc, V
GS
= 10 Vdc, Peak I
L
= 17 Apk, L = 5.0 mH, R
G
= 25
Ω)
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
1.
2.
3.
4.
When surface mounted to an FR4 board using the minimum recommended pad size.
When surface mounted to an FR4 board using 0.5 sq. in. drain pad size.
Pulse Test: Pulse Width = 300
µs,
Duty Cycle = 2%.
Current Limited by Internal Lead Wires.
Symbol
V
DSS
V
GS
R
θJC
P
D
I
D
I
D
R
θJA
P
D
I
D
I
D
I
DM
R
θJA
P
D
I
D
I
D
I
DM
T
J
, T
stg
E
AS
T
L
Value
30
±20
1.65
75
68
43
67
1.87
11.3
7.1
36
120
1.04
8.4
5.3
28
−55 to 150
722
260
Unit
Vdc
Vdc
°C/W
Watts
Amps
Amps
°C/W
Watts
Amps
Amps
Amps
°C/W
Watts
Amps
Amps
Amps
°C
mJ
°C
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