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NTD4302-1 参数 Datasheet PDF下载

NTD4302-1图片预览
型号: NTD4302-1
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOSFET 68安培, 30伏特( N沟道DPAK ) [Power MOSFET 68 Amps, 30 Volts(N-Channel DPAK)]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲局域网
文件页数/大小: 10 页 / 89 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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NTD4302
100
ID , DRAIN CURRENT (AMPS)
100
ms
di/dt
V
GS
= 10 V
SINGLE PULSE
T
C
= 25°C
1 ms
I
S
t
rr
t
a
10 ms
dc
t
p
I
S
10
100
0.25 I
S
t
b
TIME
10
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
0.1
1
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Diode Reverse Recovery Waveform
1000
Rthja(t), EFFECTIVE TRANSIENT
THERMAL RESISTANCE
DUTY CYCLE
100
D = 0.5
0.2
0.1
0.05
0.02
0.01
MOUNTED TO MINIMUM RECOMMENDED FOOTPRINT
10
1
P
(pk)
t
2
DUTY CYCLE, D = t
1
/t
2
1E−03
1E−02
1E−01
t, TIME (seconds)
1E+00
t
1
0.1
SINGLE PULSE
0.01
1E−05
1E−04
R
θJA
(t) = r(t) R
θJA
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
− T
A
= P
(pk)
R
θJA
(t)
1E+02
1E+03
1E+01
Figure 13. Thermal Response − Various Duty Cycles
http://onsemi.com
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