NTD4302
6000
V
DS
= 0 V
5000
C, CAPACITANCE (pF)
C
iss
4000
3000
2000
C
rss
V
GS
0 V
DS
C
oss
V
GS
= 0 V
T
J
= 25°C
12.5
Q
T
V
D
30
V
DS
, DRAIN−TO−SOURCE− VOLTAGE (V)
1
V
GS
, GATE−TO−SOURCE− VOLTAGE (V)
10
25
7.5
V
GS
5
Q
1
Q
2
20
C
rss
C
iss
15
1000
0
10
2.5
I
D
= 2 A
T
J
= 25°C
0
10
20
30
40
50
Q
g
, TOTAL GATE CHARGE (nC)
10
10
20
30
0
0
60
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
I
S
, SOURCE CURRENT (AMPS)
V
DD
= 24 V
I
D
= 18.5 A
V
GS
= 10 V
t, TIME (ns)
25
V
GS
= 0 V
T
J
= 25°C
20
15
100
t
f
t
d(off)
t
r
t
d(on)
10
1
10
R
G
, GATE RESISTANCE (Ω)
100
10
5
0
0.5
0.6
0.7
0.8
0.9
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
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