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NTD4302_10 参数 Datasheet PDF下载

NTD4302_10图片预览
型号: NTD4302_10
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOSFET 68 A, 30 V ,NA ????频道DPAK [Power MOSFET 68 A, 30 V, N−Channel DPAK]
分类和应用:
文件页数/大小: 7 页 / 118 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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NTD4302
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 250
mA)
Positive Temperature Coefficient
Zero Gate Voltage Drain Current
(V
GS
= 0 Vdc, V
DS
= 30 Vdc, T
J
= 25°C)
(V
GS
= 0 Vdc, V
DS
= 30 Vdc, T
J
= 125°C)
Gate−Body Leakage Current (V
GS
=
±20
Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250
mAdc)
Negative Temperature Coefficient
Static Drain−Source On−State Resistance
(V
GS
= 10 Vdc, I
D
= 20 Adc)
(V
GS
= 10 Vdc, I
D
= 10 Adc)
(V
GS
= 4.5 Vdc, I
D
= 5.0 Adc)
Forward Transconductance (V
DS
= 15 Vdc, I
D
= 10 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
(V
DD
= 24 Vdc, I
D
= 20 Adc,
V
GS
= 10 Vdc,
R
G
= 2.5
W)
(V
DD
= 25 Vdc, I
D
= 1.0 Adc,
V
GS
= 10 Vdc,
R
G
= 2.5
W)
(V
DD
= 25 Vdc, I
D
= 1.0 Adc,
V
GS
= 10 Vdc,
R
G
= 6.0
W)
(V
DS
= 24 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Q
T
Q
gs
(Q1)
Q
gd
(Q2)
V
SD
2050
640
225
11
15
85
55
11
13
55
40
15
25
40
58
55
5.5
15
2400
800
310
20
25
130
90
20
20
90
75
80
Vdc
0.75
0.90
0.65
39
20
19
0.043
1.0
65
mC
ns
nC
ns
ns
ns
pF
V
GS(th)
Vdc
1.0
1.9
−3.8
0.0078
0.0078
0.010
20
3.0
0.010
0.010
0.013
W
V
(BR)DSS
Vdc
30
25
1.0
10
±100
mV/°C
mAdc
Symbol
Min
Typ
Max
Unit
I
DSS
I
GSS
nAdc
R
DS(on)
gFS
Mhos
SWITCHING CHARACTERISTICS
(Note 6)
(V
DS
= 24 Vdc, I
D
= 2.0 Adc,
V
GS
= 10 Vdc)
BODY−DRAIN DIODE RATINGS
(Note 5)
Diode Forward On−Voltage
(I
S
= 2.3 Adc, V
GS
= 0 Vdc)
(I
S
= 20 Adc, V
GS
= 0 Vdc)
(I
S
= 2.3 Adc, V
GS
= 0 Vdc, T
J
= 125°C)
Reverse Recovery Time
(I
S
= 2.3 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ms)
t
rr
t
a
t
b
Q
rr
Reverse Recovery Stored Charge
5. Indicates Pulse Test: Pulse Width = 300
msec
max, Duty Cycle
2%.
6. Switching characteristics are independent of operating junction temperature.
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