NTD4302
Power MOSFET
Features
68 A, 30 V, N−Channel DPAK
•
•
•
•
•
•
•
•
Ultra Low R
DS(on)
Higher Efficiency Extending Battery Life
Logic Level Gate Drive
Diode Exhibits High Speed, Soft Recovery
Avalanche Energy Specified
I
DSS
Specified at Elevated Temperature
DPAK Mounting Information Provided
These Devices are Pb−Free and are RoHS Compliant
http://onsemi.com
V
(BR)DSS
30 V
R
DS(on)
TYP
7.8 mW @ 10 V
N−Channel
D
I
D
MAX
68 A
Applications
•
DC−DC Converters
•
Low Voltage Motor Control
•
Power Management in Portable and Battery Powered Products:
i.e., Computers, Printers, Cellular and Cordless Telephones,
and PCMCIA Cards
Rating
Drain−to−Source Voltage
Gate−to−Source Voltage
−
Continuous
Thermal Resistance
−
Junction−to−Case
Total Power Dissipation @ T
C
= 25°C
Continuous Drain Current @ T
C
= 25°C (Note 4)
Continuous Drain Current @ T
C
= 100°C
Thermal Resistance
−
Junction−to−Ambient
(Note 2)
Total Power Dissipation @ T
A
= 25°C
Continuous Drain Current @ T
A
= 25°C
Continuous Drain Current @ T
A
= 100°C
Pulsed Drain Current (Note 3)
Thermal Resistance
−
Junction−to−Ambient
(Note 1)
Total Power Dissipation @ T
A
= 25°C
Continuous Drain Current @ T
A
= 25°C
Continuous Drain Current @ T
A
= 100°C
Pulsed Drain Current (Note 3)
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy
−
Starting T
J
= 25°C
(V
DD
= 30 Vdc, V
GS
= 10 Vdc,
Peak I
L
= 17 Apk, L = 5.0 mH, R
G
= 25
W)
Maximum Lead Temperature for Soldering
Purposes, 1/8 in from case for 10 seconds
Symbol
V
DSS
V
GS
R
qJC
P
D
I
D
I
D
R
qJA
P
D
I
D
I
D
I
DM
R
qJA
P
D
I
D
I
D
I
DM
T
J
, T
stg
E
AS
Value
30
±20
1.65
75
68
43
67
1.87
11.3
7.1
36
120
1.04
8.4
5.3
28
−55
to
150
722
G
S
MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Unit
Vdc
Vdc
°C/W
W
A
A
°C/W
W
A
A
A
°C/W
W
A
A
A
°C
mJ
1
2
1 2
4
Drain
YWW
T
4302G
4
Drain
DPAK
CASE 369D
(Straight Lead)
STYLE 2
3
1 2 3
Gate Drain Source
Y
WW
T4302
G
= Year
= Work Week
= Device Code
= Pb−Free Package
YWW
T
4302G
4
DPAK
CASE 369C
(Surface Mount)
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
3
2
1
3
Drain
Gate
Source
4
T
L
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
2. When surface mounted to an FR4 board using 0.5 sq. in. drain pad size.
3. Pulse Test: Pulse Width = 300
ms,
Duty Cycle = 2%.
4. Current Limited by Internal Lead Wires.
ORDERING INFORMATION
See detailed ordering and shipping information in the
package dimensions section on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2010
October, 2010
−
Rev. 8
1
Publication Order Number:
NTD4302/D
ONSEMI [ ON SEMICONDUCTOR ]
