NTBLS001N06C
TYPICAL CHARACTERISTICS
11
10
9
100K
Q
T
10K
1K
8
C
iss
7
C
oss
Q
Q
GD
GS
6
5
4
3
2
1
0
100
V
= 0 V
C
GS
rss
V
= 30 V
= 80 A
DS
T = 25°C
J
I
D
f = 10 kHz
T = 25°C
J
10
0
10
20
30
40
50
60
0
20
40
60
80
100
120
140
160
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
G
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Gate Charge
1000
100
10
1000
V
V
= 10 V
= 30 V
= 80 A
V
= 0 V
GS
GS
DS
t
r
I
D
t
d(off)
100
10
t
d(on)
T = 175°C
J
t
f
1
T = 150°C
J
T = 25°C T = −55°C
J J
0.1
1
10
R , GATE RESISTANCE (W)
100
0.2 0.3 0.4 0.5
0.6 0.7 0.8 0.9
1.0 1.1
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
G
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
1000
100
10
10 ms
T
= 25°C
J(initial)
TBD
0.5 ms
1 ms
Single Pulse
= 25°C
T
= 100°C
J(initial)
T
C
10
1
V
GS
≤ 10 V
10 ms
1
R
Limit
DS(on)
Thermal Limit
Package Limit
0.1
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Peak Power
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