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NTBLS001N06C 参数 Datasheet PDF下载

NTBLS001N06C图片预览
型号: NTBLS001N06C
PDF下载: 下载PDF文件 查看货源
内容描述: [MOSFET - Power, Single, N-Channel, TOLL, 60 V, 0.9 mΩ, 422 A]
分类和应用:
文件页数/大小: 7 页 / 423 K
品牌: ONSEMI [ ONSEMI ]
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NTBLS001N06C  
Table 1. ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
J
Parameter  
OFF CHARACTERISTICS  
Symbol  
Test Conditions  
Min  
Typ  
Max  
Units  
DraintoSource Breakdown Voltage  
V
I
D
= 250 mA, V = 0 V  
60  
V
(BR)DSS  
GS  
DraintoSource Breakdown Voltage  
Temperature Coefficient  
V
/T  
J
I = 562 mA, ref to 25°C  
D
26  
mV/°C  
(BR)DSS  
V
= 60 V,  
GS  
T = 25°C  
10  
Zero Gate Voltage Drain Current  
I
mA  
mA  
nA  
DS  
J
DSS  
V
= 0 V  
T = 125°C  
J
100  
100  
GatetoSource Leakage Current  
ON CHARACTERISTICS (Note 3)  
Gate Threshold Voltage  
I
V
= 0 V, V = 20 V  
GS  
GSS  
DS  
GS  
V
GS(th)  
V
= V , I = 562 mA  
2.0  
2.8  
9.9  
4.0  
V
mV/°C  
mW  
mW  
S
DS  
D
Negative Threshold Temperature Coefficient  
DraintoSource On Resistance  
DraintoSource On Resistance  
Forward Transconductance  
GateResistance  
V
/T  
I = 562 mA, ref to 25°C  
D
GS(th)  
J
R
R
V
GS  
= 10 V, I = 80 A  
0.75  
1.09  
290  
0.6  
0.9  
1.4  
DS(on)  
DS(on)  
D
V
= 6 V, I = 56 A  
D
GS  
DS  
g
V
= 5 V, I = 80 A  
D
FS  
R
T = 25°C  
W
G
A
CHARGES & CAPACTIANCES  
Input Capacitance  
C
V
GS  
= 0 V, V = 30 V, f = 10 kHz  
11575  
5973  
76  
pF  
pF  
pF  
nC  
nC  
nC  
nC  
nC  
iss  
DS  
Output Capacitance  
C
oss  
Reverse Transfer Capacitance  
Total Gate Charge  
C
rss  
Q
V
GS  
= 10 V, V = 30 V,  
143  
31  
G(tot)  
DS  
I
= 80 A  
D
Threshold Gate Charge  
Q
G(th)  
GatetoSource Charge  
GatetoDrain Charge  
Q
54  
gs  
gd  
Q
13  
Total Gate Charge  
Q
V
GS  
= 6 V, V = 30 V,  
D
52  
G(tot)  
DS  
I
= 80 A  
SWITCHING CHARACTERISTICS, V = 10 V (Note 3)  
GS  
TurnOn Delay Time  
Rise Time  
t
V
= 10 V, V = 30 V,  
34  
53  
ns  
ns  
ns  
ns  
d(on)  
GS  
D
DS  
I
= 80 A, R = 6 W  
G
t
r
TurnOff Delay Time  
Fall Time  
t
119  
91  
d(off)  
t
f
DRAINSOURCE DIODE CHARACTERISTICS  
Forward Diode Voltage  
V
I
I
= 80 A, V = 0 V  
T = 25°C  
0.79  
0.66  
120  
60  
1.2  
V
V
SD  
S
GS  
J
= 80 A, V = 0 V  
T = 125°C  
J
S
GS  
Reverse Recovery Time  
Charge Time  
t
ns  
ns  
ns  
nC  
V
GS  
= 0 V, dI /d = 100 A/ms,  
S t  
rr  
I
= 56 A  
S
t
a
Discharge Time  
t
60  
b
Reverse Recovery Charge  
Q
322  
rr  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
3. Switching characteristics are independent of operating junction temperatures  
www.onsemi.com  
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