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NL17SZ00DFT2G 参数 Datasheet PDF下载

NL17SZ00DFT2G图片预览
型号: NL17SZ00DFT2G
PDF下载: 下载PDF文件 查看货源
内容描述: 单路2输入与非门 [Single 2-Input NAND Gate]
分类和应用: 栅极触发器逻辑集成电路光电二极管PC
文件页数/大小: 6 页 / 60 K
品牌: ONSEMI [ ONSEMI ]
 浏览型号NL17SZ00DFT2G的Datasheet PDF文件第1页浏览型号NL17SZ00DFT2G的Datasheet PDF文件第2页浏览型号NL17SZ00DFT2G的Datasheet PDF文件第4页浏览型号NL17SZ00DFT2G的Datasheet PDF文件第5页浏览型号NL17SZ00DFT2G的Datasheet PDF文件第6页  
NL17SZ00  
DC ELECTRICAL CHARACTERISTICS  
T
A
= 255C  
Typ  
*405C v T v 855C  
A
V
CC  
Min  
Max  
Min  
Max  
(V)  
Symbol  
Parameter  
Condition  
Unit  
V
IH  
High−Level Input Voltage  
1.65 to 1.95 0.75 V  
0.75 V  
0.7 V  
V
CC  
CC  
CC  
CC  
2.3 to 5.5  
0.7 V  
V
Low−Level Input Voltage  
High−Level Output Voltage  
1.65 to 1.95  
2.3 to 5.5  
0.25 V  
0.3 V  
0.25 V  
0.3 V  
V
V
IL  
CC  
CC  
CC  
CC  
V
OH  
I
= 100 mA  
= −3 mA  
= −8 mA  
1.65 to 5.5  
1.65  
2.3  
V
CC  
− 0.1  
V
V
CC  
− 0.1  
OH  
CC  
I
OH  
V
IN  
= V or V  
IH  
1.55  
1.65  
2.1  
2.4  
2.7  
2.5  
4.0  
1.55  
IL  
I
OH  
1.9  
2.2  
2.4  
2.3  
3.8  
1.9  
2.2  
2.4  
2.3  
3.8  
I
= −12 mA  
= −16 mA  
= −24 mA  
= −32 mA  
OH  
2.7  
I
OH  
3.0  
I
OH  
I
OH  
3.0  
4.5  
V
OL  
Low−Level Output Voltage  
= V or V  
I
= 100 mA  
1.65 to 5.5  
1.65  
2.3  
0.1  
0.24  
0.3  
0.1  
0.24  
0.3  
V
OL  
I
= 3 mA  
= 8 mA  
OL  
V
0.08  
0.20  
0.22  
0.28  
0.38  
0.42  
IN  
IH  
OH  
I
OL  
I
= 12 mA  
= 16 mA  
= 24 mA  
= 32 mA  
OL  
2.7  
0.4  
0.4  
I
OL  
3.0  
0.4  
0.4  
I
OL  
I
OL  
3.0  
0.55  
0.55  
0.55  
0.55  
4.5  
I
Input Leakage Current  
V
V
= V or GND  
0 to 5.5  
5.5  
$0.1  
$1.0  
mA  
mA  
IN  
IN  
CC  
I
Quiescent Supply Current  
= V or GND  
1
10  
CC  
IN  
CC  
AC ELECTRICAL CHARACTERISTICS t = t = 3.0 ns  
R
F
T
A
= 255C  
*405C v T v 855C  
A
V
CC  
Min  
Typ  
5.4  
4.5  
3.0  
2.4  
2.4  
2.0  
2.4  
Max  
11.4  
9.5  
6.5  
4.5  
5.0  
3.9  
4.3  
Min  
2.0  
2.0  
0.8  
0.5  
1.5  
0.5  
0.8  
Max  
(V)  
1.65  
1.8  
Symbol  
Parameter  
Condition  
R = 1 MW, C = 15 pF  
Unit  
t
t
Propagation Delay  
(Figure 3 and 4)  
2.0  
2.0  
0.8  
0.5  
1.5  
0.5  
0.8  
12  
ns  
PLH  
L
L
PHL  
R = 1 MW, C = 15 pF  
10.0  
7.0  
4.7  
5.2  
4.1  
4.5  
L
L
R = 1 MW, C = 15 pF  
2.5 to 0.2  
L
L
R = 1 MW, C = 15 pF  
3.3 $ 0.3  
L
L
R = 500 W, C = 50 pF  
L
L
R = 1 MW, C = 15 pF  
5.0 $ 0.5  
L
L
R = 500 W, C = 50 pF  
L
L
CAPACITIVE CHARACTERISTICS  
Symbol  
Parameter  
Condition  
= 5.5 V, V = 0 V or V  
Typical  
u4  
Unit  
pF  
C
Input Capacitance  
V
CC  
IN  
I
CC  
C
Power Dissipation Capacitance  
(Note 5)  
10 MHz, V = 3.3 V, V = 0 V or V  
25  
pF  
PD  
CC  
I
CC  
CC  
10 MHz, V = 5.5 V, V = 0 V or V  
30  
CC  
I
5. C is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.  
PD  
Average operating current can be obtained by the equation: I  
) = C V f + I . C is used to determine the no−load dynamic  
CC(OPR  
PD CC in CC PD  
2
power consumption; P = C V  
f + I V  
.
D
PD  
CC  
in  
CC  
CC  
http://onsemi.com  
3
 
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