MPSA42 MPSA43
120
100
hFE , DC CURRENT GAIN
80
60
40
–55°C
20
0
0.1
1.0
IC, COLLECTOR CURRENT (mA)
10
100
25°C
TJ = +125°C
VCE = 10 Vdc
Figure 1. DC Current Gain
100
Ceb @ 1MHz
C, CAPACITANCE (pF)
f T, CURRENT–GAIN — BANDWIDTH (MHz)
80
70
60
50
40
30
20
10
1.0
2.0 3.0
5.0 7.0 10
20
30
IC, COLLECTOR CURRENT (mA)
TJ = 25°C
VCE = 20 V
f = 20 MHz
50 70 100
10
1.0
Ccb @ 1MHz
0.1
0.1
1.0
10
100
VR, REVERSE VOLTAGE (VOLTS)
1000
Figure 2. Capacitance
Figure 3. Current–Gain – Bandwidth
1.4
1.2
V, VOLTAGE (VOLTS)
1.0
0.8
0.6
0.4
0.2
0.0
0.1
VCE(sat) @ 25°C, IC/IB = 10
VCE(sat) @ 125°C, IC/IB = 10
VCE(sat) @ –55°C, IC/IB = 10
VBE(sat) @ 25°C, IC/IB = 10
VBE(sat) @ 125°C, IC/IB = 10
VBE(sat) @ –55°C, IC/IB = 10
VBE(on) @ 25°C, VCE = 10 V
VBE(on) @ 125°C, VCE = 10 V
VBE(on) @ –55°C, VCE = 10 V
1.0
10
IC, COLLECTOR CURRENT (mA)
100
Figure 4. ”ON” Voltages
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
ONSEMI [ ON SEMICONDUCTOR ]
