MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPSA42/D
High Voltage Transistors
NPN Silicon
COLLECTOR
3
2
BASE
1
EMITTER
MPSA42*
MPSA43
*Motorola Preferred Device
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
MPSA42
300
300
6.0
500
625
5.0
1.5
12
– 55 to +150
MPSA43
200
200
6.0
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
1
2
3
CASE 29–11, STYLE 1
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
200
83.3
Unit
°C/mW
°C/mW
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 100
m
Adc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 100
m
Adc, IC = 0)
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
(VCB = 160 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
(VEB = 4.0 Vdc, IC = 0)
1. Pulse Test: Pulse Width
MPSA42
MPSA43
IEBO
MPSA42
MPSA43
—
—
0.1
0.1
V(BR)CEO
MPSA42
MPSA43
V(BR)CBO
MPSA42
MPSA43
V(BR)EBO
ICBO
—
—
0.1
0.1
µAdc
300
200
6.0
—
—
—
Vdc
µAdc
300
200
—
—
Vdc
Vdc
v
300
m
s, Duty Cycle
v
2.0%.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1998
1
ONSEMI [ ON SEMICONDUCTOR ]
