MMBTA92LT1G, MMBTA93LT1G
100
C
ib
@ 1MHz
f T, CURRENT-GAIN — BANDWIDTH (MHz)
150
130
110
90
70
50
30
10
1
3
5
11
13
15
7
9
I
C
, COLLECTOR CURRENT (mA)
T
J
= 25°C
V
CE
= 20 Vdc
F = 20 MHz
17
19
21
C, CAPACITANCE (pF)
10
C
cb
@ 1MHz
1.0
0.1
0.1
1.0
10
100
V
R
, REVERSE VOLTAGE (VOLTS)
1000
Figure 2. Capacitance
Figure 3. Current−Gain
−
Bandwidth
1.4
1.2
V, VOLTAGE (VOLTS)
1.0
0.8
0.6
0.4
0.2
0.0
0.1
1.0
10
I
C
, COLLECTOR CURRENT (mA)
100
V
CE(sat)
@ 25°C, I
C
/I
B
= 10
V
CE(sat)
@ 125°C, I
C
/I
B
= 10
V
CE(sat)
@ -55°C, I
C
/I
B
= 10
V
BE(sat)
@ 25°C, I
C
/I
B
= 10
V
BE(sat)
@ 125°C, I
C
/I
B
= 10
V
BE(sat)
@ -55°C, I
C
/I
B
= 10
V
BE(on)
@ 25°C, V
CE
= 10 V
V
BE(on)
@ 125°C, V
CE
= 10 V
V
BE(on)
@ -55°C, V
CE
= 10 V
Figure 4. “ON” Voltages
1
I
C
, COLLECTOR CURRENT (A)
0.1
1.0 s
0.01
10 ms
0.001
1
10
100
1000
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. Safe Operating Area
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3
ONSEMI [ ON SEMICONDUCTOR ]
