MMBTA92LT1G,
MMBTA93LT1G
High Voltage Transistors
PNP Silicon
Features
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Collector
−Emitter
Voltage
Collector
−Base
Voltage
Emitter
−Base
Voltage
Collector Current — Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
92
−300
−300
−5.0
−500
93
−200
−200
−5.0
Unit
Vdc
Vdc
Vdc
mAdc
DEVICE MARKING
MMBTA92LT1 = 2D; MMBTA93LT1 = 2E
MARKING
DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board
(Note 1) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation (Note 2)
Alumina Substrate,
(2)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
R
qJA
P
D
556
300
2.4
R
qJA
T
J
, T
stg
417
−55
to
+150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
SOT−23 (TO−236AF)
CASE 318
STYLE 6
2x
M
G
2x MG
G
= Specific Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
MMBTA92LT1G
MMBTA92LT3G
MMBTA93LT1G
Package
SOT−23
(Pb−Free)
Shipping
†
3000 / Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
SOT−23 10000 / Tape & Reel
(Pb−Free)
SOT−23
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2010
July, 2010
−
Rev. 8
1
Publication Order Number:
MMBTA92LT1/D
ONSEMI [ ON SEMICONDUCTOR ]
