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MMBTA42LT1G 参数 Datasheet PDF下载

MMBTA42LT1G图片预览
型号: MMBTA42LT1G
PDF下载: 下载PDF文件 查看货源
内容描述: 高电压晶体管 [High Voltage Transistors]
分类和应用: 晶体小信号双极晶体管光电二极管PC
文件页数/大小: 6 页 / 85 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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MMBTA42LT1G, MMBTA43LT1G
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector
−Emitter
Breakdown Voltage (Note 3)
(I
C
= 1.0 mAdc, I
B
= 0)
Collector
−Base
Breakdown Voltage
(I
C
= 100
mAdc,
I
E
= 0)
Emitter
−Base
Breakdown Voltage
(I
E
= 100
mAdc,
I
C
= 0)
Collector Cutoff Current
(V
CB
= 200 Vdc, I
E
= 0)
(V
CB
= 160 Vdc, I
E
= 0)
Emitter Cutoff Current
(V
EB
= 6.0 Vdc, I
C
= 0)
(V
EB
= 4.0 Vdc, I
C
= 0)
ON CHARACTERISTICS
(Note 3)
DC Current Gain
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc)
(I
C
= 10 mAdc, V
CE
= 10 Vdc)
(I
C
= 30 mAdc, V
CE
= 10 Vdc)
Collector
−Emitter
Saturation Voltage
(I
C
= 20 mAdc, I
B
= 2.0 mAdc)
Base−Emitter Saturation Voltage
(I
C
= 20 mAdc, I
B
= 2.0 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current
−Gain −
Bandwidth Product
(I
C
= 10 mAdc, V
CE
= 20 Vdc, f = 100 MHz)
Collector−Base Capacitance
(V
CB
= 20 Vdc, I
E
= 0, f = 1.0 MHz)
3. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2.0%.
MMBTA42
MMBTA43
f
T
C
cb
50
MHz
pF
Both Types
Both Types
MMBTA42
MMBTA43
MMBTA42
MMBTA43
V
CE(sat)
h
FE
25
40
40
40
0.5
0.5
0.9
Vdc
MMBTA42
MMBTA43
MMBTA42
MMBTA43
MMBTA42
MMBTA43
MMBTA42
MMBTA43
V
(BR)CEO
300
200
300
200
6.0
Vdc
Symbol
Min
Max
Unit
V
(BR)CBO
Vdc
V
(BR)EBO
I
CBO
Vdc
mAdc
0.1
0.1
0.1
0.1
I
EBO
mAdc
V
BE(sat)
Vdc
3.0
4.0
http://onsemi.com
2