MMBTA42LT1G,
MMBTA43LT1G
High Voltage Transistors
NPN Silicon
Features
http://onsemi.com
COLLECTOR
3
1
BASE
Symbol
MMBTA42
MMBTA43
MMBTA42
MMBTA43
MMBTA42
MMBTA43
V
CEO
Value
300
200
300
200
6.0
6.0
500
Unit
Vdc
3
1
Vdc
2
SOT−23 (TO−236)
CASE 318
STYLE 6
2
EMITTER
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Characteristic
Collector
−Emitter
Voltage
Collector
−Base
Voltage
V
CBO
Vdc
Emitter
−Base
Voltage
V
EBO
Collector Current
−
Continuous
I
C
Symbol
P
D
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board
(Note 1) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate (Note 2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Max
225
1.8
556
300
2.4
417
−55
to +150
Unit
mW
mW/°C
°C/W
1
mW
mW/°C
°C/W
°C
MARKING DIAGRAMS
R
qJA
P
D
1D M
G
G
1
M1E M
G
G
R
qJA
T
J
, T
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
1D = MMBTA42LT
M1E = MMBTA43LT
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
©
Semiconductor Components Industries, LLC, 2011
June, 2011
−
Rev. 10
1
Publication Order Number:
MMBTA42LT1/D
ONSEMI [ ON SEMICONDUCTOR ]
