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MMBT5550LT1G 参数 Datasheet PDF下载

MMBT5550LT1G图片预览
型号: MMBT5550LT1G
PDF下载: 下载PDF文件 查看货源
内容描述: 高压晶体管NPN硅 [High Voltage Transistors NPN Silicon]
分类和应用: 晶体小信号双极晶体管开关光电二极管高压
文件页数/大小: 6 页 / 118 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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MMBT5550LT1G, MMBT5551LT1G
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector
−Emitter
Breakdown Voltage (Note 3)
(I
C
= 1.0 mAdc, I
B
= 0)
Collector
−Base
Breakdown Voltage
(I
C
= 100
mAdc,
I
E
= 0)
Emitter
−Base
Breakdown Voltage
(I
E
= 10
mAdc,
I
C
= 0)
Collector Cutoff Current
(V
CB
= 100 Vdc, I
E
= 0)
(V
CB
= 120 Vdc, I
E
= 0)
(V
CB
= 100 Vdc, I
E
= 0, T
A
= 100°C)
(V
CB
= 120 Vdc, I
E
= 0, T
A
= 100°C)
Emitter Cutoff Current
(V
EB
= 4.0 Vdc, I
C
= 0)
ON CHARACTERISTICS
DC Current Gain
(I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 50 mAdc, V
CE
= 5.0 Vdc)
Collector
−Emitter
Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
Base
−Emitter
Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
Collector Emitter Cut−off
(V
CB
= 10 V)
(V
CB
= 75 V)
3. Pulse Test: Pulse Width = 300
ms,
Duty Cycle = 2.0%.
MMBT5550
MMBT5551
MMBT5550
MMBT5551
MMBT5550
MMBT5551
Both Types
MMBT5550
MMBT5551
Both Types
MMBT5550
MMBT5551
Both Types
h
FE
60
80
60
80
20
30
250
250
0.15
0.25
0.20
1.0
1.2
1.0
50
100
MMBT5550
MMBT5551
MMBT5550
MMBT5551
MMBT5550
MMBT5551
MMBT5550
MMBT5551
V
(BR)CEO
140
160
160
180
6.0
100
50
100
50
50
Vdc
Symbol
Min
Max
Unit
V
(BR)CBO
Vdc
V
(BR)EBO
I
CBO
Vdc
nAdc
mAdc
nAdc
I
EBO
V
CE(sat)
Vdc
V
BE(sat)
Vdc
I
CES
nA
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