Typical Performance Characteristics
0.3
0.25
0.2
250
V
= 1.0V
β = 10
CE
125 °C
200
150
100
50
0.15
0.1
25 °C
25 °C
125°C
- 40 °C
0.05
0
- 40 °C
0.1 0.2
0.5
1
2
5
10 20
50 100
1
10
IC - COLLECTOR CURRENT (mA)
100 200
IC - COLLECTOR CURRENT (mA)
Figure 2. Collector-Emitter Saturation Voltage vs.
Collector Current
Figure 1. Typical Pulsed Current Gain vs.
Collector Current
1
β = 10
1
0.8
0.6
0.4
0.2
0
- 40 °C
0.8
- 40 °C
25 °C
25 °C
125 °C
0.6
125 °C
0.4
V
= 1V
CE
0.2
0
0.1
1
10
25
1
10
I C - COLLECTOR CURRENT (mA)
100
200
IC - COLLECTOR CURRENT (mA)
Figure 4. Base-Emitter On Voltage vs.
Collector Current
Figure 3. Base-Emitter Saturation Voltage
vs. Collector Current
100
10
8
V
= 25V
C
obo
CB
10
1
6
C
4
ibo
2
0.1
0
0.1
1
10
0.01
REVERSE BIAS VOLTAGE (V)
25
50
75
100
125
TA - AMBIE NT TEMP ERATURE ( C)
°
Figure 6. Common-Base Open-Circuit Input and
Output Capacitance vs. Reverse-Bias Voltage
Figure 5. Collector Cut-Off Current vs.
Ambient Temperature
©1997 Fairchild Semiconductor Corporation
MMBT4126 Rev. 1.1.0
www.fairchildsemi.com
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