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MMBT3906LT1G 参数 Datasheet PDF下载

MMBT3906LT1G图片预览
型号: MMBT3906LT1G
PDF下载: 下载PDF文件 查看货源
内容描述: 通用晶体管 [General Purpose Transistor]
分类和应用: 晶体小信号双极晶体管光电二极管PC
文件页数/大小: 7 页 / 116 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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MMBT3906LT1G
0.50
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
0.001
0.01
0.1
1
I
C
/I
B
= 10
25°C
−55°C
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
150°C
1.4
I
C
/I
B
= 10
1.2
1.0
−55°C
0.8
0.6
0.4
0.2
150°C
25°C
0.0001
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 15. Collector Emitter Saturation Voltage
vs. Collector Current
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
1.4
V
CE
= 1 V
1.2
1.0
0.8
0.6
0.4
0.2
150°C
−55°C
25°C
1000
f
T
, CURRENT−GAIN−BANDWIDTH
PRODUCT (MHz)
Figure 16. Base Emitter Saturation Voltage vs.
Collector Current
V
CE
= 2 V
T
A
= 25°C
100
0.0001
0.001
0.01
0.1
1
10
0.1
1
10
100
1000
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (mA)
Figure 17. Base Emitter Voltage vs. Collector
Current
q
V , TEMPERATURE COEFFICIENTS (mV/
°
C)
1.0
0.5
0
- 0.5
+25°C TO +125°C
- 1.0
- 55°C TO +25°C
- 1.5
- 2.0
q
VB
FOR V
BE(sat)
0.001
0
20
40
60
80 100 120 140
I
C
, COLLECTOR CURRENT (mA)
160
180 200
q
VC
FOR V
CE(sat)
+25°C TO +125°C
0.1
- 55°C TO +25°C
IC (A)
1
Figure 18. Current Gain Bandwidth vs.
Collector Current
1s
100 ms
Thermal Limit
1 ms
10 ms
0.01
Single Pulse Test
@ T
A
= 25°C
0.01
0.1
1
V
CE
(Vdc)
10
100
Figure 19. Temperature Coefficients
Figure 20. Safe Operating Area
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