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MMBT3906LT1G 参数 Datasheet PDF下载

MMBT3906LT1G图片预览
型号: MMBT3906LT1G
PDF下载: 下载PDF文件 查看货源
内容描述: 通用晶体管 [General Purpose Transistor]
分类和应用: 晶体小信号双极晶体管光电二极管PC
文件页数/大小: 7 页 / 116 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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MMBT3906LT1G
3V
+9.1 V
275
< 1 ns
+0.5 V
10 k
0
C
S
< 4 pF*
10.6 V
300 ns
DUTY CYCLE = 2%
10 < t
1
< 500
ms
DUTY CYCLE = 2%
* Total shunt capacitance of test jig and connectors
t
1
10.9 V
1N916
C
S
< 4 pF*
10 k
< 1 ns
275
3V
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
T
J
= 25°C
T
J
= 125°C
10
7.0
CAPACITANCE (pF)
Q, CHARGE (pC)
5.0
C
obo
C
ibo
3.0
2.0
5000
3000
2000
1000
700
500
300
200
100
70
50
V
CC
= 40 V
I
C
/I
B
= 10
Q
T
Q
A
1.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
REVERSE BIAS (VOLTS)
20 30 40
1.0
2.0 3.0
5.0 7.0 10
20 30 50 70 100
I
C
, COLLECTOR CURRENT (mA)
200
Figure 3. Capacitance
Figure 4. Charge Data
500
300
200
100
70
50
30
20
10
7
5
I
C
/I
B
= 10
500
300
200
I
C
/I
B
= 20
t f , FALL TIME (ns)
100
70
50
30
20
10
7
5
I
C
/I
B
= 10
V
CC
= 40 V
I
B1
= I
B2
TIME (ns)
t
r
@ V
CC
= 3.0 V
15 V
40 V
2.0 V
t
d
@ V
OB
= 0 V
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 5. Turn
−On
Time
Figure 6. Fall Time
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