欢迎访问ic37.com |
会员登录 免费注册
发布采购

MMBT3906LT1G 参数 Datasheet PDF下载

MMBT3906LT1G图片预览
型号: MMBT3906LT1G
PDF下载: 下载PDF文件 查看货源
内容描述: 通用晶体管( PNP硅) [General Purpose Transistor(PNP Silicon)]
分类和应用: 晶体小信号双极晶体管光电二极管PC
文件页数/大小: 6 页 / 101 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
 浏览型号MMBT3906LT1G的Datasheet PDF文件第1页浏览型号MMBT3906LT1G的Datasheet PDF文件第3页浏览型号MMBT3906LT1G的Datasheet PDF文件第4页浏览型号MMBT3906LT1G的Datasheet PDF文件第5页浏览型号MMBT3906LT1G的Datasheet PDF文件第6页  
MMBT3906LT1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (I
C
= −1.0 mAdc, I
B
= 0)
Collector −Base Breakdown Voltage (I
C
= −10
mAdc,
I
E
= 0)
Emitter −Base Breakdown Voltage (I
E
= −10
mAdc,
I
C
= 0)
Base Cutoff Current (V
CE
= −30 Vdc, V
EB
= −3.0 Vdc)
Collector Cutoff Current (V
CE
= −30 Vdc, V
EB
= −3.0 Vdc)
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
BL
I
CEX
−40
−40
−5.0
−50
−50
Vdc
Vdc
Vdc
nAdc
nAdc
ON CHARACTERISTICS
(Note 3)
DC Current Gain
(I
C
= −0.1 mAdc, V
CE
= −1.0 Vdc)
(I
C
= −1.0 mAdc, V
CE
= −1.0 Vdc)
(I
C
= −10 mAdc, V
CE
= −1.0 Vdc)
(I
C
= −50 mAdc, V
CE
= −1.0 Vdc)
(I
C
= −100 mAdc, V
CE
= −1.0 Vdc)
Collector −Emitter Saturation Voltage
(I
C
= −10 mAdc, I
B
= −1.0 mAdc)
(I
C
= −50 mAdc, I
B
= −5.0 mAdc)
Base −Emitter Saturation Voltage
(I
C
= −10 mAdc, I
B
= −1.0 mAdc)
(I
C
= −50 mAdc, I
B
= −5.0 mAdc)
H
FE
60
80
100
60
30
V
CE(sat)
V
BE(sat)
−0.65
−0.85
−0.95
−0.25
−0.4
Vdc
300
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current −Gain — Bandwidth Product (I
C
= −10 mAdc, V
CE
= −20 Vdc, f = 100 MHz)
Output Capacitance (V
CB
= −5.0 Vdc, I
E
= 0, f = 1.0 MHz)
Input Capacitance (V
EB
= −0.5 Vdc, I
C
= 0, f = 1.0 MHz)
Input Impedance (I
C
= −1.0 mAdc, V
CE
= −10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio (I
C
= −1.0 mAdc, V
CE
= −10 Vdc, f = 1.0 kHz)
Small −Signal Current Gain (I
C
= −1.0 mAdc, V
CE
= −10 Vdc, f = 1.0 kHz)
Output Admittance (I
C
= −1.0 mAdc, V
CE
= −10 Vdc, f = 1.0 kHz)
Noise Figure (I
C
= −100
mAdc,
V
CE
= −5.0 Vdc, R
S
= 1.0 kΩ, f = 1.0 kHz)
f
T
C
obo
C
ibo
h
ie
h
re
h
fe
h
oe
NF
250
2.0
0.1
100
3.0
4.5
10
12
10
400
60
4.0
MHz
pF
pF
kΩ
X 10
− 4
mmhos
dB
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(V
CC
= −3.0 Vdc, V
BE
= 0.5 Vdc,
3.0
I
C
= −10 mAdc, I
B1
= −1.0 mAdc)
(V
CC
= −3.0 Vdc, I
C
= −10 mAdc,
3.0
10
I
B1
= I
B2
= −1.0 mAdc)
t
d
t
r
t
s
t
f
35
35
225
75
ns
ns
3. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2.0%.
3V
+9.1 V
275
< 1 ns
+0.5 V
10 k
0
C
S
< 4 pF*
10.6 V
300 ns
DUTY CYCLE = 2%
10 < t
1
< 500
ms
DUTY CYCLE = 2%
* Total shunt capacitance of test jig and connectors
t
1
10.9 V
1N916
C
S
< 4 pF*
10 k
< 1 ns
275
3V
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
http://onsemi.com
2