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MMBT3904LT1 参数 Datasheet PDF下载

MMBT3904LT1图片预览
型号: MMBT3904LT1
PDF下载: 下载PDF文件 查看货源
内容描述: 通用晶体管( NPN硅) [General Purpose Transistor(NPN Silicon)]
分类和应用: 晶体小信号双极晶体管光电二极管
文件页数/大小: 6 页 / 105 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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MMBT3904LT1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (I
C
= 1.0 mAdc, I
B
= 0)
Collector −Base Breakdown Voltage (I
C
= 10
mAdc,
I
E
= 0)
Emitter −Base Breakdown Voltage (I
E
= 10
mAdc,
I
C
= 0)
Base Cutoff Current (V
CE
= 30 Vdc, V
EB
= 3.0 Vdc)
Collector Cutoff Current (V
CE
= 30 Vdc, V
EB
= 3.0 Vdc)
ON CHARACTERISTICS
(Note 3)
DC Current Gain
(I
C
= 0.1 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 1.0 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 10 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 50 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 100 mAdc, V
CE
= 1.0 Vdc)
Collector −Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
Base −Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product (I
C
= 10 mAdc, V
CE
= 20 Vdc, f = 100 MHz)
Output Capacitance (V
CB
= 5.0 Vdc, I
E
= 0, f = 1.0 MHz)
Input Capacitance (V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
Input Impedance (V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
Voltage Feedback Ratio (V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
Small −Signal Current Gain (V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
Output Admittance (V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
Noise Figure (V
CE
= 5.0 Vdc, I
C
= 100
mAdc,
R
S
= 1.0 k ohms, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(V
CC
= 3.0 Vdc, V
BE
= − 0.5 Vdc,
I
C
= 10 mAdc, I
B1
= 1.0 mAdc)
(V
CC
= 3.0 Vdc,
I
C
= 10 mAdc, I
B1
= I
B2
= 1.0 mAdc)
t
d
t
r
t
s
t
f
35
35
200
50
ns
ns
f
T
C
obo
C
ibo
h
ie
h
re
h
fe
h
oe
NF
300
1.0
0.5
100
1.0
4.0
8.0
10
8.0
400
40
5.0
MHz
pF
pF
k ohms
X 10
− 4
mmhos
dB
H
FE
40
70
100
60
30
V
CE(sat)
V
BE(sat)
0.65
0.85
0.95
0.2
0.3
Vdc
300
Vdc
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
BL
I
CEX
40
60
6.0
50
50
Vdc
Vdc
Vdc
nAdc
nAdc
Symbol
Min
Max
Unit
3. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2.0%.
DUTY CYCLE = 2%
300 ns
+3 V
+10.9 V
10 k
−0.5 V
< 1 ns
C
S
< 4 pF*
−9.1 V′
< 1 ns
275
10 < t
1
< 500
ms
DUTY CYCLE = 2%
t
1
+3 V
+10.9 V
275
10 k
1N916
C
S
< 4 pF*
0
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
http://onsemi.com
2