MMBT3904LT1
Preferred Device
General Purpose Transistor
NPN Silicon
Features
•
Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
40
60
6.0
200
Unit
Vdc
Vdc
Vdc
mAdc
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1) T
A
= 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate, (Note 2) T
A
= 25°C
Derate above 25°C
Thermal Resistance Junction−to−Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
R
qJA
P
D
556
300
2.4
R
qJA
T
J
, T
stg
417
−55 to
+150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
1
2
SOT−23 (TO−236)
CASE 318
Style 6
1AM
= Specific Device Code
1AM
3
MARKING
DIAGRAM
1. FR−5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
ORDERING INFORMATION
Device
MMBT3904LT1
MMBT3904LT1G
MMBT3904LT3
MMBT3904LT3G
Package
SOT−23
SOT−23
SOT−23
SOT−23
Shipping
†
3000 / Tape & Reel
3000 / Tape & Reel
10000 / Tape & Reel
10000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2004
1
February, 2004 − Rev. 5
Publication Order Number:
MMBT3904LT1/D
ONSEMI [ ON SEMICONDUCTOR ]
