TYPICAL CHARACTERISTICS
PNP MJL21193
NPN MJL21194
3.0
2.5
1.4
T
= 25°C
/I = 10
J
1.2
T
= 25°C
/I = 10
J
I
C B
I
C B
1.0
0.8
2.0
1.5
1.0
V
BE(sat)
0.6
0.4
V
BE(sat)
0.5
0
0.2
0
V
CE(sat)
V
CE(sat)
0.1
1.0
10
100
0.1
1.0
10
100
I
, COLLECTOR CURRENT (AMPS)
I , COLLECTOR CURRENT (AMPS)
C
C
Figure 9. Typical Saturation Voltages
Figure 10. Typical Saturation Voltages
NPN MJL21194
PNP MJL21193
10
10
1.0
0.1
T
= 25°C
T
J
= 25°C
J
V
= 20 V (SOLID)
CE
1.0
0.1
V
= 5 V (DASHED)
CE
V
= 20 V (SOLID)
CE
V
= 5 V (DASHED)
CE
0.1
1.0
10
100
0.1
1.0
I , COLLECTOR CURRENT (AMPS)
C
10
100
I
, COLLECTOR CURRENT (AMPS)
C
Figure 11. Typical Base–Emitter Voltage
Figure 12. Typical Base–Emitter Voltage
100
There are two limitations on the power handling ability of a
transistor; average junction temperature and secondary
1 SEC
breakdown. Safe operating area curves indicate I – V
C
CE
10
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate.
T
= 25°C
C
The data of Figure 13 is based on T
= 200°C; T is
J(pk)
C
1.0
variable depending on conditions. At high case tempera-
tures, thermal limitations will reduce the power than can be
handled to values less than the limitations imposed by
second breakdown.
0.1
1.0
10
100
1000
V , COLLECTOR–EMITTER VOLTAGE (VOLTS)
CE
Figure 13. Active Region Safe Operating Area
4
Motorola Bipolar Power Transistor Device Data
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