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MJD45H11T4G 参数 Datasheet PDF下载

MJD45H11T4G图片预览
型号: MJD45H11T4G
PDF下载: 下载PDF文件 查看货源
内容描述: 硅功率晶体管 [SILICON POWER TRANSISTORS]
分类和应用: 晶体晶体管开关
文件页数/大小: 8 页 / 92 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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MJD44H11 (NPN)
MJD45H11 (PNP)
Preferred Device
Complementary Power
Transistors
DPAK For Surface Mount Applications
Designed for general purpose power and switching such as output or
driver stages in applications such as switching regulators, converters,
and power amplifiers.
Features
http://onsemi.com
Pb−Free Packages are Available
Lead Formed for Surface Mount Application in Plastic Sleeves
(No Suffix)
Straight Lead Version in Plastic Sleeves (“−1” Suffix)
Lead Formed Version in 16 mm Tape and Reel for Surface Mount
(“T4” Suffix)
Electrically Similar to Popular D44H/D45H Series
Low Collector Emitter Saturation Voltage −
V
CE(sat)
= 1.0 Volt Max @ 8.0 Amperes
Fast Switching Speeds
Complementary Pairs Simplifies Designs
Epoxy Meets UL 94, V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B
u
8000 V
Machine Model, C
u
400 V
SILICON
POWER TRANSISTORS
8 AMPERES
80 VOLTS
20 WATTS
MARKING
DIAGRAMS
4
1 2
3
DPAK
CASE 369C
STYLE 1
YWW
J4
xH11
4
DPAK−3
CASE 369D
STYLE 1
2
3
Y
WW
x
= Year
= Work Week
= 4 or 5
YWW
J4
xH11
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current − Continuous
Peak
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
Total Power Dissipation* @ T
A
= 25°C
Derate above 25°C
Operating and Storage Junction Temperature
Range
Symbol
V
CEO
V
EB
I
C
P
D
P
D
T
J
, T
stg
Max
80
5
8
16
20
0.16
1.75
0.014
−55 to
+ 150
Unit
Vdc
Vdc
Adc
W
W/°C
W
W/°C
°C
1
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient*
Lead Temperature for Soldering
Symbol
R
qJC
R
qJA
T
L
Max
6.25
71.4
260
Unit
°C/W
°C/W
°C
*These ratings are applicable when surface mounted on the minimum pad sizes
recommended.
©
Semiconductor Components Industries, LLC, 2004
1
August, 2004 − Rev. 6
Publication Order Number:
MJD44H11/D