MJD44H11 (NPN) MJD45H11 (PNP)
1000
1000
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
100
V
CE
= 4 V
V
CE
= 4 V
100
1V
T
J
= 25°C
T
J
= 25°C
V
CE
= 1 V
10
0.1
1
I
C
, COLLECTOR CURRENT (AMPS)
10
10
0.1
1
I
C
, COLLECTOR CURRENT (AMPS)
10
Figure 4. MJD44H11 DC Current Gain
Figure 5. MJD45H11 DC Current Gain
1000
1000
T
J
= 125°C
25°C
−40
°C
100
V
CE
= 1 V
hFE , DC CURRENT GAIN
T
J
= 125°C
25°C
100
−40
°C
V
CE
= 1 V
10
hFE , DC CURRENT GAIN
1
10
0.1
10
0.1
1
I
C
, COLLECTOR CURRENT (AMPS)
10
I
C
, COLLECTOR CURRENT (AMPS)
Figure 6. MJD44H11 Current Gain
versus Temperature
Figure 7. MJD45H11 Current Gain
versus Temperature
1.2
SATURATION VOLTAGE (VOLTS)
1
0.8
0.6
0.4
0.2
0
0.1
I
C
/I
B
= 10
T
J
= 25°C
V
CE(sat)
SATURATION VOLTAGE (VOLTS)
V
BE(sat)
1.2
1
0.8
0.6
0.4
0.2
0
0.1
I
C
/I
B
= 10
T
J
= 25°C
V
CE(sat)
10
V
BE(sat)
1
I
C
, COLLECTOR CURRENT (AMPS)
10
1
I
C
, COLLECTOR CURRENT (AMPS)
Figure 8. MJD44H11 On−Voltages
Figure 9. MJD45H11 On−Voltages
http://onsemi.com
5
ONSEMI [ ON SEMICONDUCTOR ]
