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MJD45H11T4G 参数 Datasheet PDF下载

MJD45H11T4G图片预览
型号: MJD45H11T4G
PDF下载: 下载PDF文件 查看货源
内容描述: 互补功率晶体管 [Complementary Power Transistors]
分类和应用: 晶体晶体管开关
文件页数/大小: 7 页 / 76 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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MJD44H11 (NPN)
MJD45H11 (PNP)
Preferred Device
Complementary Power
Transistors
DPAK For Surface Mount Applications
http://onsemi.com
Designed for general purpose power and switching such as output or
driver stages in applications such as switching regulators, converters,
and power amplifiers.
Features
Lead Formed for Surface Mount Application in Plastic Sleeves
(No Suffix)
Straight Lead Version in Plastic Sleeves (“−1” Suffix)
Electrically Similar to Popular D44H/D45H Series
Low Collector Emitter Saturation Voltage −
V
CE(sat)
= 1.0 Volt Max @ 8.0 Amperes
Fast Switching Speeds
Complementary Pairs Simplifies Designs
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B
u
8000 V
Machine Model, C
u
400 V
Pb−Free Packages are Available
SILICON
POWER TRANSISTORS
8 AMPERES
80 VOLTS, 20 WATTS
MARKING
DIAGRAMS
4
1 2
3
DPAK
CASE 369C
STYLE 1
YWW
J4
xH11G
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current
− Continuous
− Peak
Symbol
V
CEO
V
EB
I
C
P
D
20
0.16
P
D
1.75
0.014
T
J
, T
stg
−55 to +150
Max
80
5
8
16
Unit
Vdc
Vdc
Adc
W
W/°C
W
W/°C
°C
1
2
3
4
YWW
J4
xH11G
DPAK−3
CASE 369D
STYLE 1
Total Power Dissipation
@ T
C
= 25°C
Derate above 25°C
Total Power Dissipation (Note 1)
@ T
A
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Y
WW
J4xH11
G
= Year
= Work Week
= Device Code
x = 4 or 5
= Pb−Free Package
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
(Note 1)
Lead Temperature for Soldering
Symbol
R
qJC
R
qJA
T
L
Max
6.25
71.4
260
Unit
°C/W
°C/W
°C
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2006
1
January, 2006 − Rev. 7
Publication Order Number:
MJD44H11/D