MC33362
R DS(on), DRAIN−SOURCE ON−RESISTANCE (
Ω
)
10
I
D
= 200 mA
8.0
6.0
4.0
2.0
0
−50
COSS, DRAIN−SOURCE CAPACITANCE (pF)
200
V
CC
= 20 V
T
A
= 25°C
150
100
50
C
OSS
measured at 1.0 MHz with 50 mVpp.
5.0
50
500
V
DS
, DRAIN−SOURCE VOLTAGE (V)
Pulse tested at 5.0 ms with < 1.0% duty cycle
so that T
J
is as close to T
A
as possible.
−25
0
25
50
75
100
125
150
0
0.5
T
A
, AMBIENT TEMPERATURE (°C)
Figure 13. Power Switch Drain−Source
On−Resistance versus Temperature
Figure 14. Power Switch
Drain−Source Capacitance versus Voltage
4.0
3.2
C
T
= 2.0 nF
2.4
1.6
0.8
0
R
T
= 10 k
Pin 1 = Open
Pin 4, 5, 10, 11,
12, 13 = GND
T
A
= 25°C
0
10
20
V
CC
, SUPPLY VOLTAGE (V)
30
40
R
θ
JA , THERMAL RESISTANCE
JUNCTION−TO−AIR (
°
C/W)
C
T
= 390 pF
I CC, SUPPLY CURRENT (mA)
100
L = 12.7 mm of 2.0 oz.
copper. Refer to Figures
10
1.0
0.01
0.1
1.0
t, TIME (s)
10
100
Figure 15. Supply Current versus Supply Voltage
Figure 16. DW and P Suffix Transient
Thermal Resistance
R
θ
JA , THERMAL RESISTANCE
JUNCTION−TO−AIR (
°
C/W)
R
θ
JA, THERMAL RESISTANCE
JUNCTION−TO−AIR (
°
C/W)
90
80
70
60
50
R
qJA
40
30
0
10
2.4
2.0
1.6
1.2
0.8
0.4
0
50
80
60
40
20
P
D(max)
for T
A
= 70°C
R
qJA
L
Printed circuit board heatsink example
L
2.0 oz
Copper
L
3.0 mm
Graphs represent symmetrical layout
L
3.0 mm
Graphs represent symmetrical layout
20
30
40
0
0
10
20
30
L, LENGTH OF COPPER (mm)
L, LENGTH OF COPPER (mm)
Figure 17. DW Suffix (SOP−16L) Thermal Resistance and
Maximum Power Dissipation versus P.C.B. Copper Length
Figure 18. P Suffix (DIP−16) Thermal Resistance and
Maximum Power Dissipation versus P.C.B. Copper Length
http://onsemi.com
6
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
2.0 oz
Copper
P
D(max)
for T
A
= 50°C
Printed circuit board heatsink example
4.0
3.0
2.0
1.0
0
40
50
P D , MAXIMUM POWER DISSIPATION (W)
PD, MAXIMUM POWER DISSIPATION (W)
100
2.8
100
5.0
ÎÎÎÎÎ
ÎÎÎÎÎ
ONSEMI [ ON SEMICONDUCTOR ]
