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MBR20100CT 参数 Datasheet PDF下载

MBR20100CT图片预览
型号: MBR20100CT
PDF下载: 下载PDF文件 查看货源
内容描述: 开关模式™功率整流器 [SWITCHMODE? Power Rectifiers]
分类和应用: 二极管开关局域网
文件页数/大小: 4 页 / 123 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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MBR2080CT, MBR2090CT, MBR20100CT
MAXIMUM RATINGS
(Per Diode Leg)
MBR
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated V
R
) T
C
= 133°C
Peak Repetitive Forward Current
(Rated V
R
, Square Wave, 20 kHz) T
C
= 133°C
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave,
single phase, 60 Hz)
Peak Repetitive Reverse Surge Current (2.0
ms,
1.0 kHz)
Operating Junction Temperature (Note 1)
Storage Temperature
Voltage Rate of Change (Rated V
R
)
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
2080CT
80
2090CT
90
20100CT
100
Unit
V
10
20
150
A
A
A
I
RRM
T
J
T
stg
dv/dt
0.5
*65
to +175
*65
to +175
10,000
A
°C
°C
V/ms
THERMAL CHARACTERISTICS
Maximum Thermal Resistance Junction−to−Case
Junction−to−Ambient
R
qJC
R
qJA
v
F
2.0
60
°C/W
ELECTRICAL CHARACTERISTICS
(Per Diode Leg)
Maximum Instantaneous Forward Voltage (Note 2)
(i
F
= 10 Amps, T
C
= 125°C)
(i
F
= 10 Amps, T
C
= 25°C)
(i
F
= 20 Amps, T
C
= 125°C)
(i
F
= 20 Amps, T
C
= 25°C)
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, T
C
= 125°C)
(Rated dc Voltage, T
C
= 25°C)
V
0.75
0.85
0.85
0.95
mA
6.0
0.1
i
R
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
D
/dT
J
< 1/R
qJA
.
2. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
2.0%.
ORDERING INFORMATION
Device
MBR2080CT
MBR2080CTG
MBR2090CT
MBR2090CTG
MBR20100CT
MBR20100CTG
Package
TO−220
TO−220
(Pb−Free)
TO−220
TO−220
(Pb−Free)
TO−220
TO−220
(Pb−Free)
50 Units / Rail
50 Units / Rail
50 Units / Rail
Shipping
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2