MBR2080CT, MBR2090CT,
MBR20100CT
SWITCHMODE™
Power Rectifiers
This series uses the Schottky Barrier principle with a platinum
barrier metal. These state−of−the−art devices have the following
features:
Features
http://onsemi.com
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•
•
•
•
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•
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20 A Total (10 A Per Diode Leg)
Guard−Ring for Stress Protection
Low Forward Voltage
175°C Operating Junction Temperature
Epoxy Meets UL 94 V−0 @ 0.125 in
Low Power Loss/High Efficiency
High Surge Capacity
Low Stored Charge Majority Carrier Conduction
Shipped 50 units per plastic tube
Pb−Free Packages are Available*
SCHOTTKY BARRIER
RECTIFIERS
20 AMPERES
80−100 VOLTS
1
2, 4
3
4
Mechanical Characteristics:
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Case: Epoxy, Molded
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Weight: 1.9 grams (approximately)
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Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
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Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
TO−220AB
CASE 221A
PLASTIC
1
2
3
MARKING DIAGRAM
AY WW
B20x0G
AKA
A
Y
WW
B20x0
x
G
AKA
= Assembly Location
= Year
= Work Week
= Device Code
= 8, 9 or 10
= Pb−Free Device
= Polarity Designator
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
1
Publication Order Number:
MBR20100CT/D
©
Semiconductor Components Industries, LLC, 2009
September, 2009
−
Rev. 0
ONSEMI [ ON SEMICONDUCTOR ]
