Thermal Characteristics(1)
Values are at TA = 25°C unless otherwise noted.
Symbol
PC
Parameter
Value
800
Unit
mW
Collector Power Dissipation
RθJA
Thermal Resistance, Junction-to-Ambient
150
°C/W
Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Parameter
Conditions
Min.
160
140
8
Typ.
Max.
Unit
V
Collector-Base Breakdown Voltage
IC = 100 μA, IE = 0
Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0
V
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
IE = 10 μA, IC = 0
V
VCB = 60 V, IE = 0
0.1
0.1
μA
μA
IEBO
Emitter Cut-Off Current
VEB = 5 V, IC = 0
hFE
DC Current Gain
VCE = 2 V, IC = 50 mA
IC = 200 mA, IB = 20 mA
IC = 200 mA, IB = 20 mA
40
30
400
0.7
VCE(sat)
VBE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
0.2
V
V
0.86
1.00
fT
Current Gain Bandwidth Product
50
MHz
VCE = 10 V, IC = 50 mA
VCB = 10 V, IE = 0,
f = 1 MHz
Cob
Output Capacitance
8
pF
hFE Classification
Classification
R
O
Y
G
hFE
40 ~ 80
70 ~ 140
120 ~ 240
200 ~ 400
© 2001 Fairchild Semiconductor Corporation
KSC1009 Rev. 1.3
www.fairchildsemi.com
2
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