September 2015
KSC1009
NPN Epitaxial Silicon Transistor
Features
• High Voltage Amplifier
• High Collector-Base Voltage : VCBO = 160 V
• Collector Current : IC = 700 mA
TO-92
1. Emitter
2. Base
3. Collector
• Collector Power Dissipation : PC = 800 mW
• Complement to KSA709
1
1
2
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
• Non Suffix “-C” means Side Collector (1. Emitter 2. Base 3. Collector)
2
3
3
Straight Lead
Bulk Packing
Bent Lead
Tape & Reel
Ammo Packing
Ordering Information
Part Number
Top Mark
Package
TO-92 3L
Packing Method
Ammo
KSC1009YTA
C1009 Y-
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
160
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
140
V
8
V
700
mA
°C
°C
TJ
Junction Temperature
Storage Temperature
150
TSTG
-55 to 150
© 2001 Fairchild Semiconductor Corporation
KSC1009 Rev. 1.3
www.fairchildsemi.com
ONSEMI [ ONSEMI ]
