Electrical Characteristics (KA7810AE)
Refer to the test circuit, 0°C < TJ < +125 °C, IO = 1 A, VI = 16 V, CI = 0.33 μF, CO = 0.1 μF, unless otherwise specified.
Symbol
Parameter
Conditions
TJ =+25°C
Min.
Typ. Max.
Unit
9.8
10.0
10.2
VO
Output Voltage
V
IO = 5 mA to 1 A, PO ≤ 15 W,
VI = 12.8 V to 25 V
9.6
10.0
10.4
VI = 12.8 V to 26 V, IO = 500 mA
VI = 13 V to 20 V
8
4
100
50
Line Regulation(25)
Load Regulation(25)
Regline
mV
VI = 12.5 V to 25 V
TJ = +25°C
8
100
50
VI = 13 V to 20 V
3
TJ = +25°C, IO = 5 mA to 1.5 A
IO = 5 mA to 1 mA
12
12
5
100
100
50
Regload
IQ
mV
mA
mA
IO = 250 mA to 750 mA
TJ = +25°C
Quiescent Current
5
6
I
O = 5 mA to 1.0 A
0.5
0.8
0.5
ΔIQ
Quiescent Current Change
VI = 12.8 V to 25 V, IO = 500 mA
VI = 13 V to 26 V, TJ = +25°C
IO = 5 mA
ΔV/ΔT
Output Voltage Drift(26)
Output Noise Voltage
-1
mV/°C
μV
VN
f = 10 Hz to 100 kHz, TA = +25°C
58
f = 120 Hz, IO = 500 mA,
VI = 14 V to 24 V
RR
Ripple Rejection(26)
62
dB
VDrop
RO
Dropout Voltage
IO = 1 A, TJ = +25°C
f = 1 kHz
2
V
mΩ
mA
A
Output Resistance(26)
Short-Circuit Current
Peak Current(26)
17
ISC
VI = 35 V, TA = +25°C
TJ = +25°C
250
2.2
IPK
Notes:
25. Load and line regulation are specified at constant junction temperature. Change in VO due to heating effects must
be taken into account separately. Pulse testing with low duty is used.
26. These parameters, although guaranteed, are not 100% tested in production.
© 2006 Fairchild Semiconductor Corporation
KA78XXE / KA78XXAE Rev. 1.9
www.fairchildsemi.com
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