Electrical Characteristics (KA7805AE)
Refer to the test circuit, 0°C < TJ < +125°C, Io = 1 A, VI = 10 V, CI = 0.33 μF, CO = 0.1 μF, unless otherwise specified.
Symbol
Parameter
Conditions
Min.
Typ. Max.
Unit
TJ =+25°C
4.9
5.0
5.1
VO
Output Voltage
V
IO = 5 mA to 1 A, PO ≤ 15 W,
VI = 7.5 V to 20 V
4.8
5.0
5.2
VI = 7.5 V to 25 V, IO = 500 mA
VI = 8 V to 12 V
5.0
3.0
5.0
1.5
9
50.0
50.0
50.0
25.0
100
100
50
Line Regulation(21)
Regline
mV
VI= 7.3 V to 20 V
TJ = +25°C
VI= 8 V to 12 V
TJ =+25°C, IO = 5 mA to 1.5 A
IO = 5 mA to 1 A
Regload
IQ
Load Regulation(21)
Quiescent Current
9
mV
mA
mA
IO = 250 mA to 750 mA
TJ = +25°C
4
5
6
IO = 5 mA to 1 A
0.5
ΔIQ
Quiescent Current Change VI = 8 V to 25 V, IO = 500 mA
0.8
VI = 7.5 V to 20 V, TJ = +25°C
0.8
ΔV/ΔT
Output Voltage Drift(22)
Output Noise Voltage
IO = 5 mA
-0.8
42
mV/°C
μV
VN
f = 10 Hz to 100 kHz, TA =+25°C
f = 120 Hz, IO = 500 mA,
VI = 8 V to 18 V
RR
Ripple Rejection(22)
68
dB
VDrop
RO
Dropout Voltage
IO = 1 A, TJ = +25°C
f = 1 kHz
2
V
mΩ
mA
A
Output Resistance(22)
Short-Circuit Current
Peak Current(22)
17
ISC
VI = 35 V, TA = +25°C
TJ = +25°C
250
2.2
IPK
Notes:
21. Load and line regulation are specified at constant junction temperature. Change in VO due to heating effects must
be taken into account separately. Pulse testing with low duty is used.
22. These parameters, although guaranteed, are not 100% tested in production.
© 2006 Fairchild Semiconductor Corporation
KA78XXE / KA78XXAE Rev. 1.9
www.fairchildsemi.com
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