HN1B01FDW1T1
Typical Electrical Characteristics: PNP Transistor
−200
I
C
, COLLECTOR CURRENT (mA)
−2.0 mA
−160
−1.5 mA
−1.0 mA
h
FE
, DC CURRENT GAIN
T
A
= 100°C
1000
−120
−0.5 mA
−80
I
B
= −0.2 mA
−40
T
A
= 25°C
0
0
−1
−2
−3
−4
−5
−6
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
25°C
100
−25°C
10
−1
V
CE
= −1.0 V
−10
−100
−1000
I
C
, COLLECTOR CURRENT (mA)
Figure 1. Collector Saturation Region
V
CE(sat)
, MAXIMUM COLLECTOR VOLTAGE (V)
Figure 2. DC Current Gain
1000
−1
I
C
/I
B
= 10
T
A
= 100°C
25°C
−0.1
−25°C
h
FE
, DC CURRENT GAIN
T
A
= 100°C
25°C
100
−25°C
10
−1
V
CE
= −6.0 V
−10
−100
−1000
−0.01
−1
−10
−100
−1000
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
Figure 4. V
CE(sat)
versus I
C
−10
BASE−EMITTER SATURATION
VOLTAGE (V)
−10,000
COMMON EMITTER
V
CE
= 6 V
I
B
, BASE CURRENT (mA)
−1000
25°C
T
A
= 100°C
−25°C
−100
−1
−10
T
A
= 25°C
I
C
/I
B
= 10
−10
−100
−1000
−1
−0.1
0 −0.1 −0.2 −0.3 −0.4 −0.5 −0.6 −0.7 −0.8 −0.9
V
BE
, BASE−EMITTER VOLTAGE (V)
−1
−0.1
−1
I
C
, COLLECTOR CURRENT (mA)
Figure 5. V
BE(sat)
versus I
C
Figure 6. Base−Emitter Voltage
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