HN1B01FDW1T1
Complementary Dual
General Purpose
Amplifier Transistor
PNP and NPN Surface Mount
http://onsemi.com
Features
•
•
•
•
High Voltage and High Current: V
CEO
= 50 V, I
C
= 200 mA
High h
FE
: h
FE
= 200X400
Moisture Sensitivity Level: 1
ESD Rating
− Human Body Model: 3A
− Machine Model: C
•
Pb−Free Package is Available
(6)
(5)
(4)
Q
1
Q
2
(1)
(2)
(3)
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current − Continuous
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
C
Value
60
50
7.0
200
Unit
Vdc
Vdc
Vdc
mAdc
6
5
4
3
12
SC−74
CASE 318F
STYLE 3
MARKING DIAGRAM
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
R9 M
THERMAL CHARACTERISTICS
Characteristic
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
P
D
T
J
T
stg
Max
380
150
−55 to +150
Unit
mW
°C
°C
R9 = Device Code
M = Date Code
ORDERING INFORMATION
Device
HN1B01FDW1T1
HN1B01FDW1T1G
Package
SC−74
Shipping
†
3000/Tape & Reel
SC−74 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2005
March, 2005 − Rev. 2
Publication Order Number:
HN1B01FDW1T1/D
ONSEMI [ ON SEMICONDUCTOR ]
