Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
Parameter
Max.
500
4
Unit
mW
Total Device Dissipation, by RθJA
mW/°C
°C/W
Derate Above 25°C
RθJA
Thermal Resistance, Junction-to-Ambient
250
Note:
3. Device is mounted on FR-4 PCB 4.5 inch X 5 inch, mounting pad 0.02 in2 of 2 oz copper.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
BVCEO
BVCBO
BVEBO
Parameter
Conditions
Min.
-30
Max.
Unit
V
Collector-Emitter Breakdown Voltage IC = -10 mA, IB = 0
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
IC = -100 μA, IE = 0
IE = -100 μA, IC = 0
-35
V
-5.0
V
V
CB = -30 V, IE = 0
-100
-10
nA
ICBO
IEBO
Collector Cut-Off Current
Emitter Cut-Off Current
VCB = -30 V, IE = 0,
TA = 100°C
μA
VEB = -4.0 V, IC = 0
-100
nA
VCE = -2.0 V, IC = -50 mA
VCE = -2.0 V, IC = -500 mA
VCE = -2.0 V, IC = -1 A
VCE = -2.0 V, IC = -2 A
IC = -1 A, IB = -100 mA
IC = -2 A, IB = -200 mA
IC = -1 A, IB = -100 mA
IC = -1 A, VCE = -2.0 V
70
100
80
300
hFE
DC Current Gain(4)
40
-500
-750
-1.25
-1.0
Collector-Emitter Saturation
Voltage(4)
V
CE(sat)
mV
VBE(sat) Base-Emitter Saturation Voltage(4)
V
V
VBE(on)
Base-Emitter On Voltage(4)
IC = -100 mA, VCE = -5 V,
f = 100 MHz
fT
Current Gain Bandwidth Product
100
MHz
pF
VCB = -10 V, IE = 0,
f = 1 MHz
Cobo
Output Capacitance
25
Note:
4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%
© 1998 Fairchild Semiconductor Corporation
FMMT549 Rev. 1.1.0
www.fairchildsemi.com
2
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