October 2014
FMMT549
PNP Low-Saturation Transistor
Features
3
• This device is designed with high-current gain and low-saturation
voltage with collector currents up to 2 A continuous.
• Sourced from process PB.
2
SuperSOT-23
Marking : 549
1
1. Base 2. Emitter 3. Collector
Ordering Information
Part Number
Marking
Package
Packing Method
FMMT549
549
SSOT 3L
Tape and Reel
Absolute Maximum Ratings(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
VCEO
Parameter
Value
Unit
V
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
-30
VCBO
-35
V
VEBO
-5
V
Continuous
-1
-2
IC
Collector Current
A
Peak Pulse Current
TJ
Junction Temperature
150
°C
°C
TSTG
Storage Temperature Range
-55 to +150
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
© 1998 Fairchild Semiconductor Corporation
FMMT549 Rev. 1.1.0
www.fairchildsemi.com
ONSEMI [ ONSEMI ]
