Typical Characteristics
1000
100
10
-50
VCE = -6V
-45
IB = -400µA
-40
IB = -350µA
-35
IB = -300µA
-30
-25
-20
-15
-10
-5
IB = -250µA
IB = -200µA
IB = -150µA
IB = -100µA
IB = -50µA
1
-0.1
0
-1
-10
-100
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
-10
-100
-10
-1
IC = 10 IB
VCE = -6V
-1
VBE(sat)
-0.1
VCE(sat)
-0.01
-0.1
0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1
-10
-100
-1000
IC[mA], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
1000
VCE = -6V
I
= 0
fE= 1MHz
10
100
10
1
-1
-10
-1
-10
-100
IC[mA], COLLECTOR CURRENT
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
Figure 6. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation
Rev. B2, August 2002
ONSEMI [ ONSEMI ]
