FJX733
3
Low Frequency Amplifier
•
•
Collector-Base Voltage V
Complement to FJX945
= -60V
CBO
2
1
SOT-323
1. Base 2. Emitter 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
a
Symbol
Parameter
Ratings
-60
Units
V
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
CBO
-50
V
CEO
EBO
-5
V
I
-150
200
mA
mW
°C
C
P
Collector Power Dissipation
Junction Temperature
Storage Temperature
C
T
T
150
J
-55 ~ 150
°C
STG
Electrical Characteristics T =25°C unless otherwise noted
a
Symbol
Parameter
Test Condition
Min.
-60
-50
- 5
Typ.
Max.
Units
BV
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
I = -100, I =0
V
V
CBO
CEO
EBO
C
E
BV
BV
I = -10mA. I =0
C
B
I
= -10. I =0
V
E
C
I
I
V
V
V
= -25V, I =0
-100
-100
700
nA
nA
CBO
EBO
CB
EB
CE
E
Emitter Cut-off Current
= -3V, I =0
C
h
DC Current Gain
= -6V, I = -1mA
40
FE
C
V
V
(sat)
(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
I = -100mA, I = -10mA
-0.18
-0.62
180
-0.3
V
V
CE
C
B
V
= -6V, I = -1mA
-0.50
50
-0.80
BE
CE
CE
CB
C
f
Current Gain Bandwidth Product
Output Capacitance
V
V
= -6V, I = -10mA
MHz
pF
T
C
C
= -10V, I = 0
2.8
ob
E
f=1MHz
NF
Noise Figure
V
= -6V, I = -0.3mA
6.0
20
dB
CE
C
f=1MHz, Rs=10K
h
Classification
FE
Classification
R
O
Y
G
200 ~ 400
L
h
40 ~ 80
70 ~ 140
120 ~ 240
350 ~ 700
FE
Marking
SBX
Grade
©2002 Fairchild Semiconductor Corporation
Rev. B2, August 2002
ONSEMI [ ONSEMI ]
