Thermal Characteristics(3)
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
Parameter
Max.
2
Unit
W
Power Dissipation, TC = 25°C
Derate Above 25°C
16
mW/°C
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
Note:
3. Device is mounted on FR-4 PCB 36 mm × 18 mm × 1.5 mm; mounting pad for the collector lead minimum 6 cm2.
Electrical Characteristics(4)
Values are at TA = 25°C unless otherwise noted.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Parameter
Conditions
Min.
500
400
6
Typ.
Max.
Unit
V
Collector-Base Breakdown Voltage
IC = 100 μA, IE = 0
Collector-Emitter Breakdown Voltage IC = 1 mA, IB = 0
V
Emitter-Base Breakdown Voltage
Collector-Base Cut-Off Current
Collector-Emitter Cut-Off Current
Emitter-Base Cut-Off Current
IE = 100 μA, IC = 0
V
VCB = 400 V, IE = 0
100
500
100
nA
nA
nA
ICES
VCE = 400 V, VBE = 0
VEB = 4 V, IC = 0
IEBO
VCE = 10 V, IC = 1 mA
VCE = 10 V, IC = 10 mA
VCE = 10 V, IC = 50 mA
VCE = 10 V, IC = 100 mA
IC = 1 mA, IB = 0.1 mA
40
50
45
40
200
hFE
DC Current Gain
0.40
0.50
0.75
0.75
V
CE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1 mA
V
IC = 50 mA, IB = 5 mA
IC = 10 mA, IB = 1 mA
VBE(sat) Base-Emitter Saturation Voltage
Cobo Output Capacitance
Note:
V
VCB = 20 V, IE = 0,
f = 1.0 MHz
7
pF
4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%
© 2002 Fairchild Semiconductor Corporation
FJT44 Rev. 1.1.0
www.fairchildsemi.com
2
ONSEMI [ ONSEMI ]
