October 2014
FJT44
NPN Epitaxial Silicon Transistor
Features
• High-Voltage Transistor
4
3
2
1
SOT-223
1. Base 2,4. Collector 3. Emitter
Ordering Information
Part Number
FJT44TF
Marking
FJT44
Package
SOT-223 4L
SOT-223 4L
Packing Method, Size
Tape and Reel, 4000 pcs
Tape and Reel, 2500 pcs
FJT44KTF
FJT44
Absolute Maximum Ratings(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
500
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
400
V
6
V
300
mA
°C
°C
TJ
Junction Temperature
150
TSTG
Storage Temperature Range
-55 to +150
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
© 2002 Fairchild Semiconductor Corporation
FJT44 Rev. 1.1.0
www.fairchildsemi.com
ONSEMI [ ONSEMI ]
